Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices von Mavrou, G., Galata, S., Tsipas, P., Sotiropoulos, A., Panayiotatos, Y., Dimoulas, A., Evangelou, E. K., Seo, J. W., Dieker, Ch

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack von Ritenour, A., Khakifirooz, A., Antoniadis, D. A., Lei, R. Z., Tsai, W., Dimoulas, A., Mavrou, G., Panayiotatos, Y.

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The role of La surface chemistry in the passivation of Ge von Dimoulas, A., Tsoutsou, D., Panayiotatos, Y., Sotiropoulos, A., Mavrou, G., Galata, S. F., Golias, E.

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Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors von Dimoulas, A., Vellianitis, G., Mavrou, G., Evangelou, E. K., Sotiropoulos, A.

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Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks von Tsipas, P., Volkos, S. N., Sotiropoulos, A., Galata, S. F., Mavrou, G., Tsoutsou, D., Panayiotatos, Y., Dimoulas, A., Marchiori, C., Fompeyrine, J.

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Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition von Tsoutsou, D., Apostolopoulos, G., Galata, S. F., Tsipas, P., Sotiropoulos, A., Mavrou, G., Panayiotatos, Y., Dimoulas, A., Lagoyannis, A., Karydas, A. G., Kantarelou, V., Harissopoulos, S.

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Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium von TSOUTSOU, D, APOSTOLOPOULOS, G, GALATA, S, TSIPAS, P, SOTIROPOULOS, A, MAVROU, G, PANAYIOTATOS, Y, DIMOULAS, A

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The effect of Se and Se/Al passivation on the oxidation of Ge von Tsoutsou, D., Panayiotatos, Y., Galata, S., Sotiropoulos, A., Mavrou, G., Golias, E., Dimoulas, A.

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Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates von EVANGELOU, E. K, RAHMAN, M. S, ANDROULIDAKIS, I. I, DIMOULAS, A, MAVROU, G, GIANNAKOPOULOS, K. P, ANAGNOSTOPOULOS, D. F, VALICU, R, BORCHERT, G. L

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Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors von Evangelou, E.K., Mavrou, G., Dimoulas, A., Konofaos, N.

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Total Dose Response of Ge MOS Capacitors With HfO2/Dy 2O3 Gate Stacks von Chen, D.K, Schrimpf, R.D, Fleetwood, D.M, Galloway, K.F, Pantelides, S.T, Dimoulas, A, Mavrou, G, Sotiropoulos, A, Panayiotatos, Y

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SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress von RAHMAN, M. S, EVANGELOU, E. K, ANDROULIDAKIS, I. I, DIMOULAS, A, MAVROU, G, GALATA, S

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Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric von MAVROU, G, GALATA, S. F, SOTIROPOULOS, A, TSIPAS, P, PANAYIOTATOS, Y, DIMOULAS, A, EVANGELOU, E. K, SEO, J. W, DIEKER, Ch

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MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement von Vellianitis, G, Apostolopoulos, G, Mavrou, G, Argyropoulos, K, Dimoulas, A, Hooker, J.C, Conard, T, Butcher, M

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Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates von Mavrou, G., Tsipas, P., Sotiropoulos, A., Galata, S., Panayiotatos, Y., Dimoulas, A., Marchiori, C., Fompeyrine, J.

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Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy von Mavrou, G., Vellianitis, G., Apostolopoulos, G., Argyropoulos, K., Dimoulas, A., Scholz, R.

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Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors von Dimoulas, A., Vellianitis, G., Mavrou, G., Evangelou, E.K., Argyropoulos, K., Houssa, M.

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Total Dose Response of Ge MOS Capacitors With HfO /Dy O Gate Stacks von Chen, D.K., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Pantelides, S.T., Dimoulas, A., Mavrou, G., Sotiropoulos, A., Panayiotatos, Y.

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Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry von Tsoutsou, D., Panayiotatos, Y., Sotiropoulos, A., Mavrou, G., Golias, E., Galata, S. F., Dimoulas, A.

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Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers von Afanas’ev, V. V., Stesmans, A., Mavrou, G., Dimoulas, A.

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