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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon von Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Hofstetter, R., Li, Y., Anand, M. J., Ang, K. S., Maung, Y. K. T., Foo, S. C.

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AlGaN/GaN MISHEMTs on silicon using atomic layer deposited ZrO2 as gate dielectrics von Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Hofstetter, R., Li, Y., Anand, M. J., Ang, K. S., Maung, Y. K. T., Foo, S. C.

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Strategy and Efficacy of Generic and Pan-genotypic Sofosbuvir/Velpatasvir in Chronic Hepatitis C Virus: A Myanmar Experience von Bwa, Aung H., Nangia, Gayatri, Win, Si T.S., Maung, Soe T., Han, Khin A.W., Htar, Su S., Wine, Lei Y., Ko, Wint W., Oo, Moe P., Hlaing, Naomi K.T., Palecki, Julia, Loza, Bao L., Win, Khin M., Reddy, Rajender

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