Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure von REED, M. A, RANDALL, J. N, AGGARWAL, R. J, MATYI, R. J, MOORE, T. M, WETSEL, A. E

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Wavelet transform approach to the analysis of specular x-ray reflectivity curves von Prudnikov, I. R., Matyi, R. J., Deslattes, R. D.

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A high resolution triple axis X-ray diffraction analysis of radiation damage in lysozyme crystals von Volz, Heather M, Matyi, Richard J

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Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells von Deshpande, MR, Sleight, JW, Reed, MA, Wheeler, RG, Matyi, RJ

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High-resolution X-ray diffraction analyses of protein crystals von Volz, H. M., Matyi, R. J.

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High Resolution X-ray Scattering Methods For ULSI Materials Characterization von Matyi, Richard J

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Triple-axis x-ray diffraction analyses of hen egg-white lysozyme crystals von Matyi, R J, Volz, H M

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Development of a glass-bonded compliant substrate von Hansen, D.M., Moran, P.D., Dunn, K.A., Babcock, S.E., Matyi, R.J., Kuech, T.F.

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High resolution x-ray diffraction analyses of GaN/LiGaO2 von Matyi, R J, Doolittle, W A, Brown, A S

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Experimental test for elastic compliance during growth on glass-bonded compliant substrates von Moran, P. D., Hansen, D. M., Matyi, R. J., Mawst, L. J., Kuech, T. F.

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Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates von Lee, J. W., Shichijo, H., Tsai, H. L., Matyi, R. J.

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InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality von Moran, P. D., Hansen, D. M., Matyi, R. J., Cederberg, J. G., Mawst, L. J., Kuech, T. F.

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Particle Size, Particle Size Distribution, and Related Measurements of Supported Metal Catalysts von Matyi, R. J., Schwartz, L. H., Butt, J. B.

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Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes von Li, Jiang, Mirabedini, A, Mawst, L.J, Savage, D.E, Matyi, R.J, Kuech, T.F

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Realization and characterization of ultrathin GaAs-on-insulator structures von MORAN, P. D, HANSEN, D. M, MATYI, R. J, REDWING, J. M, KUECH, T. F

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Diffractometer Noise Characteristics: Experimental Determination and Application to Statistical Rocking-Curve Analysis von Staley, T. W., Matyi, R. J.

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Triple crystal x-ray diffraction analysis of chemical-mechanical polished gallium arsenide von WANG, V. S, MATYI, R. J

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Alignment system for crossed parabolic x-ray mirrors von Matyi, R. J., Moran, P. D., Hagquist, W. W. D., Volz, H. M.

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Field ion specimen preparation from near-surface regions von Larson, D.J, Miller, M.K, Ulfig, R.M, Matyi, R.J, Camus, P.P, Kelly, T.F

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Generation of misfit dislocations in GaAs grown on Si von TSAI, H. L, MATYI, R. J

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