AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate von Tokranov, V., Nagaiah, P., Yakimov, M., Matyi, R.J., Oktyabrsky, S.

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Modified statistical dynamical diffraction theory: analysis of model SiGe heterostructures von Shreeman, P. K., Dunn, K. A., Novak, S. W., Matyi, R. J.

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Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment von Colombi, P., Agnihotri, D. K., Asadchikov, V. E., Bontempi, E., Bowen, D. K., Chang, C. H., Depero, L. E., Farnworth, M., Fujimoto, T., Gibaud, A., Jergel, M., Krumrey, M., Lafford, T. A., Lamperti, A., Ma, T., Matyi, R. J., Meduna, M., Milita, S., Sakurai, K., Shabel'nikov, L., Ulyanenkov, A., Van der Lee, A., Wiemer, C.

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X-ray reflectometry analyses of chromium thin films von Matyi, R.J., Hatzistergos, M.S., Lifshin, E.

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Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure von REED, M. A, RANDALL, J. N, AGGARWAL, R. J, MATYI, R. J, MOORE, T. M, WETSEL, A. E

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High resolution X-ray diffraction analyses of ion-implanted GaN/AlN/Si heterostructures von Matyi, R. J., Jamil, M., Shahedipour-Sandvik, F.

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Implementation of statistical dynamic diffraction theory for defective semiconductor heterostructure modelling von Shreeman, P. K., Matyi, R. J.

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Application of statistical dynamical diffraction theory to highly defective ion implanted SiGe heterostructures von Shreeman, P. K., Matyi, R. J.

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The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers — Preliminary results from the second round-robin von Matyi, R.J., Depero, L.E., Bontempi, E., Colombi, P., Gibaud, A., Jergel, M., Krumrey, M., Lafford, T.A., Lamperti, A., Meduna, M., Van der Lee, A., Wiemer, C.

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Triple-axis x-ray diffraction analyses of hen egg-white lysozyme crystals von Matyi, R J, Volz, H M

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Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells von Deshpande, MR, Sleight, JW, Reed, MA, Wheeler, RG, Matyi, RJ

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Particle Size, Particle Size Distribution, and Related Measurements of Supported Metal Catalysts von Matyi, R. J., Schwartz, L. H., Butt, J. B.

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High-resolution X-ray diffraction analyses of protein crystals von Volz, H. M., Matyi, R. J.

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Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor von REED, M. A, FRENSLEY, W. R, MATYI, R. J, RANDALL, J. N, SEABAUGH, A. C

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Development of a glass-bonded compliant substrate von Hansen, D.M., Moran, P.D., Dunn, K.A., Babcock, S.E., Matyi, R.J., Kuech, T.F.

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Application Of Statistical Dynamical X-ray Diffraction Theory To Defective Semiconductor Heterostructures von Shreeman, P K, Matyi, R J

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High resolution x-ray diffraction analyses of GaN/LiGaO2 von Matyi, R J, Doolittle, W A, Brown, A S

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Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates von Lee, J. W., Shichijo, H., Tsai, H. L., Matyi, R. J.

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Generation of misfit dislocations in GaAs grown on Si von TSAI, H. L, MATYI, R. J

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Realization and characterization of ultrathin GaAs-on-insulator structures von MORAN, P. D, HANSEN, D. M, MATYI, R. J, REDWING, J. M, KUECH, T. F

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