On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb) von Zakgeim, A. L., Karandashev, S. A., Klimov, A. A., Kunkov, R. E., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A., Chernyakov, A. E.

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Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures von Matveev, B. A., Ratushnyi, V. I., Rybal’chenko, A. Yu

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Self-cooling in reverse biased p-InAsSbP/n-InAs0.9Sb0.1 heterostructures von Karandashev, S. A., Lavrov, A. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A.

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InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors von Aleksandrov, S. E., Gavrilov, G. A., Kapralov, A. A., Matveev, B. A., Remennyi, M. A., Sotnikova, G. Yu

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Low Frequency Noise and Resistance in Non-Passivated InAsSbP/InAs based Photodiodes in the Presence of Atmosphere with Ethanol Vapor von Levinshtein, M. E., Matveev, B. A., Dyakonova, N.

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Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure von Matveev, B. A., Ratushnyi, V. I., Rybal’chenko, A. Yu

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Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) von Karandashev, S. A., Matveev, B. A., Remennyi, M. A.

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Thermal Resistance of LEDs Based on a Narrow-Gap InAsSb Solid Solution von Zakgeim, A. L., Klimov, A. A., Lukhmyrina, T. S., Matveev, B. A., Chernyakov, A. E.

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Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes von Dyakonova, N V, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions von Karandashev, S. A., Klimov, A. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A.

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Morphology and redispersibility of silver nanoparticles prepared by chemical reduction von Lukhmyrina, T S, Shestakov, M S, Shvidchenko, A V, Matveev, B A

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Longwave (λ0.1 = 10 μm, 296 K) Infrared Photodetectors Based on InAsSb0.38 Solid Solution von Kunkov, R. E., Klimov, A. A., Lebedeva, N. M., Lukhmyrina, T. S., Matveev, B. A., Remennyy, M. A., Usikova, A. A.

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Midinfrared Light-Emitting Diodes Based on А3В5 Heterostructures in Gas-Analyzer-Equipment Engineering: Potential and Applications in 2014–2018 von Matveev, B. A., Sotnikova, G. Yu

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Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates von Klimov, A A, Kunkov, R E, Lavrov, A A, Lebedeva, N M, Lukhmyrina, T C, Matveev, B A, Remennyi, M A

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On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance von Karandashev, S. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A.

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Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides von Matveev, B. A., Ratushnyi, V. I., Rybal’chenko, A. Yu

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Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure von Karandashev, S A, Klimov, A A, Kunkov, R E, Lavrov, A A, Lukhmyrina, T S, Matveev, B A, Remennyi, M A, Usikova, A A

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