Effects of different plasma species (atomic N, metastable N2, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy von Oye, Michael M., Mattord, Terry J., Hallock, Gary A., Bank, Seth R., Wistey, Mark A., Reifsnider, Jason M., Ptak, Aaron J., Yuen, Homan B., Harris, James S., Holmes, Archie L.

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Effects of different plasma species (atomic N, metastable N 2 , and ions)on the optical properties of dilute nitride materials grownby plasma-assisted molecular-beam epitaxy von Oye, Michael M., Mattord, Terry J., Hallock, Gary A., Bank, Seth R., Wistey, Mark A., Reifsnider, Jason M., Ptak, Aaron J., Yuen, Homan B., Harris, James S., Holmes, Archie L.

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Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides von Oye, Michael M., Wistey, Mark A., Reifsnider, Jason M., Agarwal, Sumit, Mattord, Terry J., Govindaraju, Sridhar, Hallock, Gary A., Holmes, Archie L., Bank, Seth R., Yuen, Homan B., Harris, James S.

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Effects of different plasma species (atomic N, metastable N{sub 2}, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy von Oye, Michael M., Mattord, Terry J., Hallock, Gary A., Bank, Seth R., Wistey, Mark A., Reifsnider, Jason M., Ptak, Aaron J., Yuen, Homan B., Harris, James S. Jr, Holmes, Archie L. Jr, Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, Samsung Austin Semiconductor, 12100 Samsung Blvd., Austin, Texas 78754, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colarado 80401, Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904

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Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment von Mattord, Terry J., Oye, Michael M., Gotthold, David, Hansing, Chad, Holmes, Archie L., Streetman, Ben G.

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Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma von Gotthold, David W., Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie L., Streetman, Ben G.

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Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems von Oye, Michael M., Ahn, J., Cao, C., Chen, H., Fordyce, W., Gazula, D., Govindaraju, S., Hurst, J. B., Lipson, S., Lu, D., Reifsnider, J. M., Shchekin, O., Sidhu, R., Sun, X., Deppe, D. G., Holmes, A. L., Mattord, Terry J.

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Growth of GaNAs by molecular beam expitaxy using a N 2 /Ar rf plasma von Gotthold, David W., Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie L., Streetman, Ben G.

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Growth of GaNAs by molecular beam expitaxy using a N sub(2)/Ar rf plasma von Gotthold, David W, Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie LJr, Streetman, Ben G

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Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction von KESAN, VIJAY P, MATTORD, TERRY J, MATTORD, TERRY, TREETMAN, BEN G, STREETMAN, BEN G

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MOLECULAR BEAM EPITAXY EFFUSION CELL von MATTORD, TERRY, J

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Molecular beam epitaxy effusion cell von MATTORD, TERRY J

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MOLECULAR BEAM EPITAXY EFFUSION CELL von MATTORD, TERRY, J

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MOLECULAR BEAM EPITAXY EFFUSION CELL von MATTORD, TERRY, J

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MOLECULAR BEAM EPITAXY EFFUSION CELL von MATTORD, TERRY, J

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MOLECULAR BEAM EPITAXY EFFUSION CELL von MATTORD, TERRY, J

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80nm) Si1−xGex step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field... von Oye, Michael M., Shahrjerdi, Davood, Ok, Injo, Hurst, Jeffrey B., Lewis, Shannon D., Dey, Sagnik, Kelly, David Q., Joshi, Sachin, Mattord, Terry J., Yu, Xiaojun, Wistey, Mark A., Harris, James S., Holmes, Archie L., Lee, Jack C., Banerjee, Sanjay K.

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Heater for high vacuum optical view port von GILBERT, MICHAEL H, MATTORD, TERRY J

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Heater for high vacuum optical view port von GILBERT, MICHAEL H, MATTORD, TERRY J

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin ( ∼ 80 nm ) Si 1 − x Ge x step-graded buffer layersfor high- κ III-V metal-oxide-semiconduct... von Oye, Michael M., Shahrjerdi, Davood, Ok, Injo, Hurst, Jeffrey B., Lewis, Shannon D., Dey, Sagnik, Kelly, David Q., Joshi, Sachin, Mattord, Terry J., Yu, Xiaojun, Wistey, Mark A., Harris, James S., Holmes, Archie L., Lee, Jack C., Banerjee, Sanjay K.

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