A computational study of the factors affecting the electrical conductance of long chain n-porphyrin di-thiols von Jones, G., Elias, Watheq, Elliott, M., Matthai, C.C.

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Critical thickness and growth modes of SiC layers on Si substrates — a molecular dynamics study von Bhatti, Q.A., Matthai, C.C.

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Simulation studies of protein translocation in mitochondria von Loebl, H.C., Matthai, C.C.

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The collapse of vacancy clusters: A molecular dynamics study von Matthai, C.C., Bacon, D.J.

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The atomic structure of the Si(111) [formula omitted] reconstruction von Levermann, A.H., Howes, P.B., Edwards, K.A., Anyele, H.T., Matthai, C.C., Macdonald, J.E., Feidenhans'l, R., Lottermoser, L., Seehofer, L., Falkenberg, G., Johnson, R.L.

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On the unfaulting of vacancy loops in BCC metals von Matthai, C.C., Bacon, D.J.

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Adsorption and diffusion of Ga, In and As adatoms on (001) and (111) GaAs surfaces: a computer simulation study von Matthai, C.C., Moran, G.A.

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The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects von Westwood, D.I, Sobiesierski, Z, Matthai, C.C

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An extended BFM model for simulation of copolymers at an interface von James, E., Matthai, C.C.

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Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces von Bhatti, Q.A., Matthai, C.C.

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Metal-semiconductor fluctuations on reconstructed SnSi(111) surfaces von Anyele, H.T., Griffiths, C.L., Cafolla, A.A., Matthai, C.C., Williams, R.H.

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Cleavage force as a function of separation in a finite model of silicon with a chemically bonded force field von Matthai, C.C., March, N.H.

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Cleavage force, tribology and bond breaking in some transition metals von OSETSKY, Y. N, BACON, D. J, MATTHAI, C. C, MARCH, N. H

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Schottky barrier height at the Au/porous silicon interface von Ke, Maolong, Matthai, C.C., Pavlov, A., Laiho, R.

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The influence of the spatial structure on the electronic properties of porous silicon: quantum chemical study von Gavartin, J.L., Matthai, C.C., Morrison, I.

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Ballistic elecron emission microscopy of [formula omitted] relaxed heterostructure interfaces von Ke, Mao-long, Westwood, D.I., Matthai, C.C., Richardson, B.

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A molecular dynamics study of the critical thickness of Ge layers on Si substrates von Ashu, P., Matthai, C.C.

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Structural and elastic properties of porous silicon von Matthai, C.C., Gavartin, J.L., Cafolla, A.A.

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The electronic structure and luminescence properties of porous silicon and silicon nanoclusters von Gavartin, J.L., Matthai, C.C.

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Molecular dynamics simulation of germanium on silicon (001) substrates von Ashu, P., Matthai, C.C.

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