A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs von Duffy, S. J., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H. O., Bourzgui, N. E., Soltani, A.

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High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping von Soltani, A., Rousseau, M., Gerbedoen, J.-C., Mattalah, M., Bonanno, P. L., Telia, A., Bourzgui, N., Patriarche, G., Ougazzaden, A., BenMoussa, A.

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Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range von Soltani, A., Stolz, A., Charrier, J., Mattalah, M., Gerbedoen, J.-C., Barkad, H. A., Mortet, V., Rousseau, M., Bourzgui, N., BenMoussa, A., De Jaeger, J.-C.

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Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes von Barkad, H A, Soltani, A, Mattalah, M, Gerbedoen, J-C, Rousseau, M, De Jaeger, J-C, BenMoussa, A, Mortet, V, Haenen, K, Benbakhti, B, Moreau, M, Dupuis, R, Ougazzaden, A

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AlGaN/GaN MISHEMT with hBN as gate dielectric von Gerbedoen, J.-C., Soltani, A., Mattalah, M., Moreau, M., Thevenin, P., De Jaeger, J.-C.

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Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate von Mattalah, M., Soltani, A., Gerbedoen, J.-C., Ahaitouf, Az, Defrance, N., Cordier, Y., De Jaeger, J.-C.

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Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies von Mattalah, M., Telia, A., Soltani, A., De Jaeger, J.-C., Thevenin, P., Bath, A., Akkal, B., Abid, H.

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193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors von Soltani, A., Barkad, H. A., Mattalah, M., Benbakhti, B., De Jaeger, J.-C., Chong, Y. M., Zou, Y. S., Zhang, W. J., Lee, S. T., BenMoussa, A., Giordanengo, B., Hochedez, J.-F.

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Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate von Duffy, S. J., Benbakhti, B., Mattalah, M., Zhang, W., Bouchilaoun, M., Boucherta, M., Kalna, K., Bourzgui, N., Maher, H., Soltani, A.

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High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping von Soltani, A., Rousseau, M., Gerbedoen, J.-C., Bourzgui, N., Mattalah, M., Bonanno, P. L., Ougazzaden, A., UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine, 2-3 Rue Marconi, 57070 Metz-Technopôle, Telia, A., Patriarche, G., BenMoussa, A.

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Analysis of the SiO 2 /Si 3 N 4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate von Mattalah, M., Soltani, A., Gerbedoen, J.‐C., Ahaitouf, Az, Defrance, N., Cordier, Y., De Jaeger, J.‐C.

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Design, fabrication and physical analysis of TiN/AIN deep UV photodiodes von BARKAD, H. A, SOLTANI, A, MOREAU, M, DUPUIS, R, OUGAZZADEN, A, MATTALAH, M, GERBEDOEN, J.-C, ROUSSEAU, M, DE JAEGER, J.-C, BENMOUSSA, A, MORTET, V, HAENEN, K, BENBAKHTI, B

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AIGaN/GaN MISHEMT with hBN as gate dielectric von GERBEDOEN, J.-C, SOLTANI, A, MATTALAH, M, MOREAU, M, THEVENIN, P, DE JAEGER, J.-C

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Study of ohmic contact formation on AlGaN/GaN HEMT with AlN spacer on silicon substrate von Gerbedoen, J.-C., Soltani, A., Mattalah, M., Telia, A., Troadec, D., Abdallah, B., Gautron, E., De Jaeger, J.-C.

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