BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions von Alcala, R., Materano, M., Lomenzo, P. D., Grenouillet, L., Francois, T., Coignus, J., Vaxelaire, N., Carabasse, C., Chevalliez, S., Andrieu, F., Mikolajick, T., Schroeder, U.

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Felice Gino Lo Porto, L'insediamento neolitico di Serra d'Alto nel Materano von Van Compernolle, Thierry

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COLINI. Armi litiche con foro del Materano (Book Review) von E. C.

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F.G. LO PORTO, "I villaggi preistorici di Murgia Timone e Murgecchia nel Materano" (Book Review) von WONTERGHEM, VAN

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F. LO PORTO, L'insediamento neolitico di Serra d'Alto nel Materano (Book Review) von Compernolle, Th Van

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Felice Gino LO PORTO, "L'insediamento neolitico di Serra d'Alto nel Materano - Monumenti antichi pubblicati per cura della Accademia Nazionale dei Lincei", série monographique, III (série générale, 53) (Book Review) von BRIQUEL, Dominique

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Polarization switching in thin doped HfO2 ferroelectric layers von Materano, Monica, Lomenzo, Patrick D., Mulaosmanovic, Halid, Hoffmann, Michael, Toriumi, Akira, Mikolajick, Thomas, Schroeder, Uwe

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A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2 von Lomenzo, Patrick D., Materano, Monica, Richter, Claudia, Alcala, Ruben, Mikolajick, Thomas, Schroeder, Uwe

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HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison von Materano, Monica, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe

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Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films von Baumgarten, Lutz, Szyjka, Thomas, Mittmann, Terence, Materano, Monica, Matveyev, Yury, Schlueter, Christoph, Mikolajick, Thomas, Schroeder, Uwe, Müller, Martina

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Many routes to ferroelectric HfO2: A review of current deposition methods von Hsain, Hanan Alexandra, Lee, Younghwan, Materano, Monica, Mittmann, Terence, Payne, Alexis, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N., Jones, Jacob L.

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Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers von Schroeder, Uwe, Sachdeva, Ridham, Lomenzo, Patrick D., Xu, Bohan, Materano, Monica, Mikolajick, Thomas, Kersch, Alfred

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Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium von Schroeder, Uwe, Materano, Monica, Mittmann, Terence, Lomenzo, Patrick D., Mikolajick, Thomas, Toriumi, Akira

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Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics von Materano, Monica, Lomenzo, Patrick D, Kersch, Alfred, Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe

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Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering von Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Park, Min Hyuk, Stolichnov, Igor, Cavalieri, Matteo, Zhou, Chuanzhen, Chung, Ching‐Chang, Jones, Jacob L., Szyjka, Thomas, Müller, Martina, Kersch, Alfred, Mikolajick, Thomas, Schroeder, Uwe

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Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices von Park, Min Hyuk, Lee, Dong Hyun, Yang, Kun, Park, Ju-Yong, Yu, Geun Taek, Park, Hyeon Woo, Materano, Monica, Mittmann, Terence, Lomenzo, Patrick D, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong

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Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors von Mehmood, Furqan, Hoffmann, Michael, Lomenzo, Patrick D., Richter, Claudia, Materano, Monica, Mikolajick, Thomas, Schroeder, Uwe

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The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors von Alcala, Ruben, Materano, Monica, Lomenzo, Patrick D., Vishnumurthy, Pramoda, Hamouda, Wassim, Dubourdieu, Catherine, Kersch, Alfred, Barrett, Nicolas, Mikolajick, Thomas, Schroeder, Uwe

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Biosurfactant production and hydrocarbon-degradation by halotolerant and thermotolerant Pseudomonas sp von Kumar, Manoj, León, Vladimir, De Sisto Materano, Angela, Ilzins, Olaf A, Luis, Luis

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1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline von Okuno, Jun, Kunihiro, Takafumi, Konishi, Kenta, Materano, Monica, Ali, Tarek, Kuehnel, Kati, Seidel, Konrad, Mikolajick, Thomas, Schroeder, Uwe, Tsukamoto, Masanori, Umebayashi, Taku

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