Activation of Mg implanted in GaN by multicycle rapid thermal annealing von Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R

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GaN vertical and lateral polarity heterostructures on GaN substrates von Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

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Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy von Freitas, J.A., Culbertson, J.C., Mastro, M.A., Kumagai, Y., Koukitu, A.

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Assembly of phosphonic acids on GaN and AlGaN von Simpkins, B S, Hong, S, Stine, R, Mäkinen, A J, Theodore, N D, Mastro, M A, Eddy, C R, Pehrsson, P E

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Influence of polarity on GaN thermal stability von Mastro, M.A., Kryliouk, O.M., Anderson, T.J., Davydov, A., Shapiro, A.

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Approach for dislocation free GaN epitaxy von Hite, J.K., Mastro, M.A., Eddy, C.R.

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Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy von Freitas, J.A., Mastro, M.A., Glaser, E.R., Garces, N.Y., Lee, S.K., Chung, J.H., Oh, D.K., Shim, K.B.

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Seeded growth of GaN single crystals from solution at near atmospheric pressure von Feigelson, B.N., Frazier, R.M., Gowda, M., Freitas, J.A., Fatemi, M., Mastro, M.A., Tischler, J.G.

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy von Nepal, N., Qadri, S. B., Hite, J. K., Mahadik, N. A., Mastro, M. A., Eddy, C. R.

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Surface depletion effects in semiconducting nanowires von Simpkins, B. S., Mastro, M. A., Eddy, C. R., Pehrsson, P. E.

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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD von Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R.

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates von Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

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Nature of luminescence and strain in gallium nitride nanowires von Mastro, M.A., Maximenko, S., Gowda, M., Simpkins, B.S., Pehrsson, P.E., Long, J.P., Makinen, A.J., Freitas, J.A., Hite, J.K., Eddy, C.R., Kim, J.

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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates von Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.

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Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates von REED, M. D, KRYLIOUK, O. M, MASTRO, M. A, ANDERSON, T. J

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging von Twigg, M. E., Picard, Y. N., Caldwell, J. D., Eddy, C. R., Mastro, M. A., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

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Correlation of threading screw dislocation density to GaN 2‐DEG mobility von Hite, J.K., Gaddipati, P., Meyer, D.J., Mastro, M.A., Eddy, C.R.

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Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps von Sundaresan, Siddarth G, Murthy, Madhu, Rao, Mulpuri V, Schreifels, John A, Mastro, M A, Eddy, Charles R, Holm, R T, Henry, R L, Freitas, Jaime A, Gomar-Nadal, Elba, Vispute, R D, Tian, Yong-Lai

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Rare-earth chloride seeded growth of GaN nano- and micro-crystals von Mastro, M.A., Freitas, J.A., Holm, R.T., Eddy, C.R., Caldwell, J., Liu, K., Glembocki, O., Henry, R.L., Kim, J.

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps von Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J.

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