A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology von De Sandre, G, Bettini, L, Pirola, A, Marmonier, L, Pasotti, M, Borghi, M, Mattavelli, P, Zuliani, P, Scotti, L, Mastracchio, G, Bedeschi, F, Gastaldi, R, Bez, R

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A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput von De Sandre, G., Bettini, L., Pirola, A., Marmonier, L., Pasotti, M., Borghi, M., Mattavelli, P., Zuliani, P., Scotti, L., Mastracchio, G., Bedeschi, F., Gastaldi, R., Bez, R.

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Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures von Armigliato, Aldo, Spessot, Alessio, Balboni, Roberto, Benedetti, Alessandro, Carnevale, Gianpietro, Frabboni, Stefano, Mastracchio, Gianfranco, Pavia, Giuseppe

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Convergent beam electron diffraction investigation of strain inducedby Ti self-aligned silicides in shallow trench Si isolation structures von Armigliato, Aldo, Spessot, Alessio, Balboni, Roberto, Benedetti, Alessandro, Carnevale, Gianpietro, Frabboni, Stefano, Mastracchio, Gianfranco, Pavia, Giuseppe

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High performance Flash memory for 65 nm embedded automotive application von Piazza, F, Boccaccio, C, Bruyere, S, Cea, R, Clark, B, Degors, N, Collins, C, Gandolfo, A, Gilardini, A, Gomiero, E, Mans, P M, Mastracchio, G, Pacelli, D, Planes, N, Simon, J, Weybright, M, Maurelli, A

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