Thermal oxidation of silicon in the ultrathin regime von Massoud, H.Z

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The spectral grid method: a novel fast Schrodinger-equation solver for semiconductor nanodevice simulation von Qing Huo Liu, Candong Cheng, Massoud, H.Z.

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Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling von Shiely, J.P, Massoud, H.Z

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Effect of thermally induced stresses on the rapid-thermal oxidation of silicon von DEATON, R, MASSOUD, H. Z

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A thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses von VASUDEVAN, N, MASSOUD, H. Z, FAIR, R. B

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Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling von SHANWARE, A, MASSOUD, H. Z, VOGEL, E, HENSON, K, HAUSER, J. R, WORTMAN, J. J

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Silicon oxidation studies: silicon orientation effects on thermal oxidation von IRENE, E. A, MASSOUD, H. Z, TIERNEY, E

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Thermal oxidation of silicon in dry oxygen: accurate determination of the kinetic rate constants von MASSOUD, H. Z, PLUMMER, J. D, IRENE, E. A

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Substrate doping and microroughness effects in RTP temperature measurement by in situ ellipsometry von SAMPSON, R. K, CONRAD, K. A, MASSOUD, H. Z, IRENE, E. A

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The effects of Ge content in Poly-Si1-xGex gate material on the tunneling barrier in PMOS devices von SHANWARE, A, MASSOUD, H. Z, ACKER, A, LI, V. Z.-Q, MIRABEDINI, M. R, HENSON, K, HAUSER, J. R, WORTMAN, J. J

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Simultaneous silicon wafer temperature and oxide film thickness measurement in rapid-thermal processing using ellipsometry von SAMPSON, R. K, CONRAD, K. A, IRENE, E. A, MASSOUD, H. Z

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Wavelength considerations for improved silicon wafer temperature measurement by ellipsometry von SAMPSON, R. K, CONRAD, K. A, MASSOUD, H. Z, IRENE, E. A

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Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency von Deaton, R., Massoud, H.Z.

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Measurement and modeling of charge feedthrough in n-channel MOS analog switches von Wilson, W.B., Massoud, H.Z., Swanson, E.J., George, R.T., Fair, R.B.

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Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses von Vasudevan, N., Fair, R. B., Massoud, H. Z.

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Causes and prevention of temperature-dependent bubbles in silicon wafer bonding von MITANI, K, LEHMANN, V, STENGL, R, FEIJOO, D, GOSELE, U. M, MASSOUD, H. Z

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Charge-transfer dipole moments at the Si-SiO2 interface von MASSOUD, H. Z

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An investigation of Si-SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon von VITKAVAGE, S. C, IRENE, E. A, MASSOUD, H. Z

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ON-state reliability of amorphous-silicon antifuses von Vasudevan, N., Fair, R. B., Massoud, H. Z., Zhao, T., Look, K., Karpovich, Y., Hart, M. J.

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Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions von DE LYON, T. J, CASEY, H. C. JR, MASSOUD, H. Z, TIMMONS, M. L, HUTCHBY, J. A, DIETRICH, H. B

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