A Peeling Approach for Integrated Manufacturing of Large Monolayer h‑BN Crystals von Wang, Ruizhi, Purdie, David G, Fan, Ye, Massabuau, Fabien C.-P, Braeuninger-Weimer, Philipp, Burton, Oliver J, Blume, Raoul, Schloegl, Robert, Lombardo, Antonio, Weatherup, Robert S, Hofmann, Stephan

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Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence von Kusch, Gunnar, Comish, Ella J, Loeto, Kagiso, Hammersley, Simon, Kappers, Menno J, Dawson, Phil, Oliver, Rachel A, Massabuau, Fabien C.-P

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Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond von Field, Daniel E, Cuenca, Jerome A, Smith, Matthew, Fairclough, Simon M, Massabuau, Fabien C-P, Pomeroy, James W, Williams, Oliver, Oliver, Rachel A, Thayne, Iain, Kuball, Martin

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Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3 von Nicol, David, Reynolds, Stephen, Barr, Kristopher, Roberts, Joseph W., Jarman, John J., Chalker, Paul R., Massabuau, Fabien C.‐P.

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Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene von Burton, Oliver J, Massabuau, Fabien C-P, Veigang-Radulescu, Vlad-Petru, Brennan, Barry, Pollard, Andrew J, Hofmann, Stephan

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Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography von Tang, Fengzai, Zhu, Tongtong, Oehler, Fabrice, Fu, Wai Yuen, Griffiths, James T., Massabuau, Fabien C.-P., Kappers, Menno J., Martin, Tomas L., Bagot, Paul A. J., Moody, Michael P., Oliver, Rachel A.

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Ni/Au contacts to corundum α-Ga2O3 von Massabuau, Fabien C.-P., Adams, Francesca, Nicol, David, Jarman, John C., Frentrup, Martin, Roberts, Joseph W., O’Hanlon, Thomas J., Kovács, Andras, Chalker, Paul R., Oliver, R. A.

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Defect structures in (001) zincblende GaN/3C-SiC nucleation layers von Vacek, Petr, Frentrup, Martin, Lee, Lok Yi, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J., Gröger, Roman, Oliver, Rachel A.

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Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties von Massabuau, Fabien C-P, Rhode, Sneha L, Horton, Matthew K, O’Hanlon, Thomas J, Kovács, András, Zielinski, Marcin S, Kappers, Menno J, Dunin-Borkowski, Rafal E, Humphreys, Colin J, Oliver, Rachel A

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A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures von Davies, Matthew J., Dawson, Philip, Massabuau, Fabien C.-P., Fol, Adrian Le, Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

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Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1−x)2O3 von Kluth, Elias, Fay, Michael, Parmenter, Christopher, Roberts, Joseph, Smith, Emily, Stoppiello, Craig, Massabuau, Fabien, Goldhahn, Rüdiger, Feneberg, Martin

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Characterisation of InGaN by Photoconductive Atomic Force Microscopy von Weatherley, Thomas F K, Massabuau, Fabien C-P, Kappers, Menno J, Oliver, Rachel A

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Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates von Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

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Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching von Massabuau, Fabien C.-P., Griffin, Peter H., Springbett, Helen P., Liu, Yingjun, Kumar, R. Vasant, Zhu, Tongtong, Oliver, Rachel A.

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Thermal stress modelling of diamond on GaN/III-Nitride membranes von Cuenca, Jerome A., Smith, Matthew D., Field, Daniel E., C-P. Massabuau, Fabien, Mandal, Soumen, Pomeroy, James, Wallis, David J., Oliver, Rachel A., Thayne, Iain, Kuball, Martin, Williams, Oliver A.

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Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth von Massabuau, Fabien, Kappers, Menno, Humphreys, Colin, Oliver, Rachel

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Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures von Hammersley, Simon, Kappers, Menno J., Massabuau, Fabien C.-P., Sahonta, Suman-Lata, Dawson, Phil, Oliver, Rachel A., Humphreys, Colin J.

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X-ray diffraction analysis of cubic zincblende III-nitrides von Frentrup, Martin, Lee, Lok Yi, Sahonta, Suman-Lata, Kappers, Menno J, Massabuau, Fabien, Gupta, Priti, Oliver, Rachel A, Humphreys, Colin J, Wallis, David J

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Atomic scale observation of threading dislocations in α-Ga2O3 von Mullen, Ross, Roberts, Joseph W., Chalker, Paul R., Oliver, Rachel A., Hourahine, Ben, Massabuau, Fabien C. P.

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Tin Gallium Oxide Epilayers on Different Substrates: Optical and Compositional Analysis von Hunter, Daniel. A., Naresh‐Kumar, Gunasekar, Edwards, Paul R., Makydonska, Olha, Massabuau, Fabien C. P., Hatipoglu, Isa, Mukhopadhyay, Partha, Schoenfeld, Winston V., Martin, Robert W.

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