A Peeling Approach for Integrated Manufacturing of Large Monolayer h‑BN Crystals von Wang, Ruizhi, Purdie, David G, Fan, Ye, Massabuau, Fabien C.-P, Braeuninger-Weimer, Philipp, Burton, Oliver J, Blume, Raoul, Schloegl, Robert, Lombardo, Antonio, Weatherup, Robert S, Hofmann, Stephan

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Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography von Tang, Fengzai, Zhu, Tongtong, Oehler, Fabrice, Fu, Wai Yuen, Griffiths, James T., Massabuau, Fabien C.-P., Kappers, Menno J., Martin, Tomas L., Bagot, Paul A. J., Moody, Michael P., Oliver, Rachel A.

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A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures von Davies, Matthew J., Dawson, Philip, Massabuau, Fabien C.-P., Fol, Adrian Le, Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

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Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence von Kusch, Gunnar, Comish, Ella J, Loeto, Kagiso, Hammersley, Simon, Kappers, Menno J, Dawson, Phil, Oliver, Rachel A, Massabuau, Fabien C.-P

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Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond von Field, Daniel E, Cuenca, Jerome A, Smith, Matthew, Fairclough, Simon M, Massabuau, Fabien C-P, Pomeroy, James W, Williams, Oliver, Oliver, Rachel A, Thayne, Iain, Kuball, Martin

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Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3 von Nicol, David, Reynolds, Stephen, Barr, Kristopher, Roberts, Joseph W., Jarman, John J., Chalker, Paul R., Massabuau, Fabien C.‐P.

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Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures von Hammersley, Simon, Kappers, Menno J., Massabuau, Fabien C.-P., Sahonta, Suman-Lata, Dawson, Phil, Oliver, Rachel A., Humphreys, Colin J.

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Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs von Hammersley, Simon, Dawson, Phil, Kappers, Menno J., Massabuau, Fabien C.-P., Frentrup, Martin, Oliver, Rachel A., Humphreys, Colin J.

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Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells von Christian, George M., Hammersley, Simon, Davies, Matthew J., Dawson, Philip, Kappers, Menno J., Massabuau, Fabien C.-P., Oliver, Rachel A., Humphreys, Colin J.

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Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties von Massabuau, Fabien C-P, Rhode, Sneha L, Horton, Matthew K, O’Hanlon, Thomas J, Kovács, András, Zielinski, Marcin S, Kappers, Menno J, Dunin-Borkowski, Rafal E, Humphreys, Colin J, Oliver, Rachel A

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Ni/Au contacts to corundum α-Ga2O3 von Massabuau, Fabien C.-P., Adams, Francesca, Nicol, David, Jarman, John C., Frentrup, Martin, Roberts, Joseph W., O’Hanlon, Thomas J., Kovács, Andras, Chalker, Paul R., Oliver, R. A.

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Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching von Massabuau, Fabien C.-P., Griffin, Peter H., Springbett, Helen P., Liu, Yingjun, Kumar, R. Vasant, Zhu, Tongtong, Oliver, Rachel A.

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Atomic scale observation of threading dislocations in α-Ga2O3 von Mullen, Ross, Roberts, Joseph W., Chalker, Paul R., Oliver, Rachel A., Hourahine, Ben, Massabuau, Fabien C. P.

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Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures von Davies, Matthew J., Massabuau, Fabien C.-P., Dawson, Philip, Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

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The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells von Davies, Matthew J., Dawson, Philip, Massabuau, Fabien C.-P., Oehler, Fabrice, Oliver, Rachel A., Kappers, Menno J., Badcock, Thomas J., Humphreys, Colin J.

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Characterisation of InGaN by Photoconductive Atomic Force Microscopy von Weatherley, Thomas F K, Massabuau, Fabien C-P, Kappers, Menno J, Oliver, Rachel A

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Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene von Burton, Oliver J, Massabuau, Fabien C-P, Veigang-Radulescu, Vlad-Petru, Brennan, Barry, Pollard, Andrew J, Hofmann, Stephan

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Pair suppression caused by mosaic-twist defects in superconducting Sr2RuO4 thin-films prepared using pulsed laser deposition von Garcia, Carla Maria Palomares, Di Bernardo, Angelo, Kimbell, Graham, Vickers, Mary E., Massabuau, Fabien C-P., Komori, Sachio, Divitini, Giorgio, Yasui, Yuuki, Lee, Han Gyeol, Kim, Jinkwon, Kim, Bongju, Blamire, Mark G., Vecchione, Antonio, Fittipaldi, Rosalba, Maeno, Yoshiteru, Noh, Tae Won, Robinson, Jason W. A.

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Luminescence properties of dislocations in α-Ga2O3 von Maruzane, Mugove, Oshima, Yuichi, Makydonska, Olha, Edwards, Paul R, Martin, Robert W, Massabuau, Fabien C-P

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Thermal stress modelling of diamond on GaN/III-Nitride membranes von Cuenca, Jerome A., Smith, Matthew D., Field, Daniel E., C-P. Massabuau, Fabien, Mandal, Soumen, Pomeroy, James, Wallis, David J., Oliver, Rachel A., Thayne, Iain, Kuball, Martin, Williams, Oliver A.

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