Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3 von Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., Martin, R. W., Massabuau, F. C.-P.

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Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions von Hammersley, S., Kappers, M. J., Massabuau, F. C.-P., Sahonta, S.-L., Dawson, P., Oliver, R. A., Humphreys, C. J.

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Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN von Smith, E.J.W., Piracha, A.H., Field, D., Pomeroy, J.W., Mackenzie, G.R., Abdallah, Z., Massabuau, F.C.-P., Hinz, A.M., Wallis, D.J., Oliver, R.A., Kuball, M., May, P.W.

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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures von Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

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Directly correlated microscopy of trench defects in InGaN quantum wells von O'Hanlon, T.J., Massabuau, F C-P., Bao, A., Kappers, M.J., Oliver, R.A.

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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem von Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A.

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Carrier localization in the vicinity of dislocations in InGaN von Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovács, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., Oliver, R. A.

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Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced von O'Hanlon, T.J., Zhu, T., Massabuau, F.C.-P., Oliver, R.A.

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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition von Roberts, J.W., Chalker, P.R., Ding, B., Oliver, R.A., Gibbon, J.T., Jones, L.A.H., Dhanak, V.R., Phillips, L.J., Major, J.D., Massabuau, F.C.-P.

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Optical and structural properties of dislocations in InGaN von Massabuau, F. C.-P., Horton, M. K., Pearce, E., Hammersley, S., Chen, P., Zielinski, M. S., Weatherley, T. F. K., Divitini, G., Edwards, P. R., Kappers, M. J., McAleese, C., Moram, M. A., Humphreys, C. J., Dawson, P., Oliver, R. A.

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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures von Davies, M. J., Dawson, P., Massabuau, F. C.-P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.

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α-Ga2O3 grown by low temperature atomic layer deposition on sapphire von Roberts, J.W., Jarman, J.C., Johnstone, D.N., Midgley, P.A., Chalker, P.R., Oliver, R.A., Massabuau, F.C-P.

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Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures von Massabuau, F. C.-P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., Dawson, P., Oliver, R. A.

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Pure single-photon emission from an InGaN/GaN quantum dot von Holmes, M. J., Zhu, T., Massabuau, F. C.-P., Jarman, J., Oliver, R. A., Arakawa, Y.

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Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques von O'Hanlon, T.J., Bao, A., Massabuau, F.C.-P., Kappers, M.J., Oliver, R.A.

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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes von Oliver, R. A., Massabuau, F. C.-P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E., Humphreys, C. J.

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A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers von Davies, M. J., Hammersley, S., Massabuau, F. C.-P., Dawson, P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells von Massabuau, F. C.-P., Trinh-Xuan, L., Lodié, D., Thrush, E. J., Zhu, D., Oehler, F., Zhu, T., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

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Structure and strain relaxation effects of defects in InxGa1−xN epilayers von Rhode, S L, Fu, W Y, C-P, Massabuau F, Kappers, M J, McAleese, C, Oehler, F, Humphreys, C J, Dusane, R O, Sahonta S–L

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Study of Ti contacts to corundum α-Ga2O3 von Massabuau, F, Nicol, D, Adams, F, Jarman, J, Roberts, J, Kovács, A, Chalker, P, Oliver, R

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