An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si von Emtsev, Valentin V., Mashovets, T.V., Klinger, P.M.

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The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it? von Mashovets, T.V., Mikhnovich, V.V., Emtsev, Valentin V., Vitovskii, N.A.

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Ionization mechanisms of defect production in semiconductors von Mashovets, T.V., Emtsev, V.V.

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Comments on the paper by A.F. Lehar and J.E. Whitehouse “Irradiation induced compensation of n-type germanium. electrical measurements.” published in Solid State Communications 17,... von Emtsev, V.V., Mashovets, T.V.

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Vacancy-donor complexes in γ-irradiated phosphorus-doped germanium von Emtsev, V. V., Korkhashkina, R. L., Mashovets, T. V.

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Ion pairing in p-InSb induced by X-rays von Mashovets, T. V., Vikhlii, G. A., Vitovskii, N. A.

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Damage Formation Rates in Ge Subject to Thermal Treatment von Khansevarov, R. Yu, Mashovets, T. V., Vitovskii, N. A.

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On the Nature of Damages in Indium Antimonide Produced by γ- and X-Irradiation von Khansevarov, R. Yu, Mashovets, T. V., Vitovskii, N. A., Chelustka, B.

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On the donor-vacancy type complexes in germanium von Emtzev, V. V., Mashovets, T. V., Maximov, M., Vitovskii, N. A.

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METHOD OF CHECKING SEMICONDUCTOR MATERIAL QUALITY von RAKHIMOV O.,SU, LAGUNOVA T.S.,SU, MASHOVETS T.V.,SU, VITOVSKIJ N.A.,SU, EMELYANENKO O.V.,SU

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Defect formation in solids by decay of electronic excitations von Klinger, M.I., Lushchik, Ch.B., Mashovets, T.V., Kholodar', G.A., Sheinkman, M.K., Élango, M.A.

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