Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials von Uematsu, Masashi

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Threshold and Characteristic LETs in SRAM SEU Cross-Section Curves von Kobayashi, Daisuke, Uematsu, Masashi, Hirose, Kazuyuki

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Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon von Kiga, Ryotaro, Uematsu, Masashi, Itoh, Kohei M.

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Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium von Yamada, Michihiro, Sawano, Kentarou, Uematsu, Masashi, Itoh, Kohei M.

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Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers von Isoda, Taiga, Uematsu, Masashi, Itoh, Kohei M.

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Electrical activation and electron spin resonance measurements of arsenic implanted in silicon von Hori, Masahiro, Uematsu, Masashi, Fujiwara, Akira, Ono, Yukinori

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Experimental evidence of the vacancy-mediated silicon self-diffusion in single-crystalline silicon von Shimizu, Yasuo, Uematsu, Masashi, Itoh, Kohei M

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Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface von Shimizu, Tsunashi, Akiyama, Toru, Pradipto, Abdul-Muizz, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, Kenji

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Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study von Shimizu, Tsunashi, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, Kenji

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Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism von Uematsu, Masashi

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Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion von Naganawa, Miki, Shimizu, Yasuo, Uematsu, Masashi, Itoh, Kohei M., Sawano, Kentarou, Shiraki, Yasuhiro, Haller, Eugene E.

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Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers von Isoda, Taiga, Uematsu, Masashi, Itoh, Kohei M.

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Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures von Uematsu, Masashi, Matsubara, Kota, Itoh, Kohei M.

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Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission von Kageshima, Hiroyuki, Shiraishi, Kenji, Uematsu, Masashi

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Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity von Uematsu, Masashi, Kageshima, Hiroyuki, Takahashi, Yasuo, Fukatsu, Shigeto, Itoh, Kohei M., Shiraishi, Kenji, Gösele, Ulrich

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First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence von Akiyama, Toru, Ito, Ayako, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, Kenji

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Si emission from the SiO2∕Si interface during the growth of SiO2 in the HfO2∕SiO2∕Si structure von Ming, Zhao, Nakajima, Kaoru, Suzuki, Motofumi, Kimura, Kenji, Uematsu, Masashi, Torii, Kazuyoshi, Kamiyama, Satoshi, Nara, Yasuo, Yamada, Keisaku

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Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions von Takahashi, Tomonori, Fukatsu, Shigeto, Itoh, Kohei M., Uematsu, Masashi, Fujiwara, Akira, Kageshima, Hiroyuki, Takahashi, Yasuo, Shiraishi, Kenji

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Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2 von Fukatsu, Shigeto, Takahashi, Tomonori, Itoh, Kohei M., Uematsu, Masashi, Fujiwara, Akira, Kageshima, Hiroyuki, Takahashi, Yasuo, Shiraishi, Kenji, Gösele, Ulrich

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Scaling and universality of roughening in thermal oxidation of Si(001) von Omi, Hiroo, Kageshima, Hiroyuki, Uematsu, Masashi

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