Formation of flaws on account of nonmetallic inclusions in the slabs during rolling von Lozovskii, E. P., Ushakov, S. N., Yurechko, D. V., Masal’skii, T. S., Filippov, A. V.

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Improvement in continuous casting at OAO MMK von Ushakov, S. N., Masal’skii, T. S., Gorostkin, S. V., Yurechko, D. V., Bogatov, M. A.

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Refining Steel in the Tundish von Sarychev, A. F., Nikolaev, O. A., Masal'skii, T. S., Bogatov, M. A.

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New continuous-casting equipment von Pak, Yu. A., Rabadzhi, D. V., Masal’skii, T. S., Filippov, A. V., Yurechko, D. V.

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Methods of separating different grades of steel during continuous casting on section and slab casters von Masal'skii, T S, Gorostkin, S V, Chaikovskii, Yu A, Zhelnin, Yu M

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Simulation of Silicon Field-Effect Conical GAA Nanotransistors with a Stacked SiO2/HfO2 Subgate Dielectric von Masal’skii, N. V.

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Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric von Masalskii, N. V.

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Influence of the Self-Heating Effect on the I–V Characteristics of Field Transistors on a Silicon-on-Insulator Structure at High Temperatures von Masalskii, N. V.

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Modeling the Characteristics of SOI CMOS Nanotransistors with an Asymmetric Surrounding Gate von Masal’skii, N. V.

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Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region von Masal’skii, N. V.

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Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region von Novoselov, A. S., Masalskii, N. V.

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On generation conditions of strong earthquakes in southern Baikal von Mel’nikova, V. I., Gilyova, N. A., Masal’skii, O. K., Radziminovich, Ya. B., Radziminovich, N. A.

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Seismicity of the Baikal rift zone for the digital recording period of earthquake observation (2001–2006) von Mel’nikova, V. I., Gileva, N. A., Radziminovich, N. A., Masal’skii, O. K., Chechel’nitskii, V. V.

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Temperature Dependencies of the Breakdown Voltage of a High-Voltage SOI LDMOS Transistor von Novoselov, A. S., Gusev, M. R., Masal’skii, N. V.

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Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor von Masal’skii, N. V.

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The 2008 Kultuk earthquake with M ^sub w^ = 6.3 in the south of Baikal: Spatial-temporal analysis of seismic activation von Mel'nikova, V I, Gileva, N A, Aref'ev, S S, Bykova, V V, Masal'skii, O K

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Low-voltage arithmetic units based on fully depleted SOI CMOS nanotransistors von Masal’skii, N. V.

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The 2008 Kultuk earthquake with M sub(w) = 6.3 in the south of Baikal: Spatial-temporal analysis of seismic activation von Mel'nikova, VI, Gileva, NA, Aref'ev, S S, Bykova, V V, Masal'skii, OK

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Investigating the Electrothermal Characteristics of Partially Depleted Submicron SOI CMOS Transistors in an Extended Temperature Range von Rumyantsev, S. V., Novoselov, A. S., Masal’skii, N. V.

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Fully depleted SOI CMOS logic gates for low-voltage applications von Masal’skii, N. V.

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