Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes von Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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Improving the Light‐Extraction Efficiency of AlGaN DUV‐LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector von Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes von Maeda, Noritoshi, Yun, Joosun, Jo, Masafumi, Hirayama, Hideki

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Growth of non-polar a-plane AlN on r-plane sapphire von Jo, Masafumi, Hirayama, Hideki

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High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells von Murotani, Hideaki, Tanabe, Ryohei, Hisanaga, Keisuke, Hamada, Akira, Beppu, Kanta, Maeda, Noritoshi, Khan, M. Ajmal, Jo, Masafumi, Hirayama, Hideki, Yamada, Yoichi

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Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters von Khan, M Ajmal, Bermundo, Juan Paolo, Ishikawa, Yasuaki, Ikenoue, Hiroshi, Fujikawa, Sachie, Matsuura, Eriko, Kashima, Yukio, Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells von Murotani, Hideaki, Miyoshi, Hiroyuki, Takeda, Ryohei, Nakao, Hiroki, Ajmal Khan, M., Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki, Yamada, Yoichi

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Controlled crystal orientations of semipolar AlN grown on an m-plane sapphire by MOCVD von Jo, Masafumi, Itokazu, Yuri, Kuwaba, Shunsuke, Hirayama, Hideki

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External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs von Khan, M. Ajmal, Itokazu, Yuri, Maeda, Noritoshi, Jo, Masafumi, Yamada, Yoichi, Hirayama, Hideki

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Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications von Tran, Binh Tinh, Maeda, Noritoshi, Jo, Masafumi, Inoue, Daishi, Kikitsu, Tomoka, Hirayama, Hideki

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Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate von Tran, Binh Tinh, Hirayama, Hideki, Maeda, Noritoshi, Jo, Masafumi, Toyoda, Shiro, Kamata, Norihiko

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Voltage dependence of two-step photocurrent generation in quantum dot intermediate band solar cells von Elborg, Martin, Noda, Takeshi, Mano, Takaaki, Jo, Masafumi, Sakuma, Yoshiki, Sakoda, Kazuaki, Han, Liyuan

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Self-Limiting Growth of Hexagonal and Triangular Quantum Dots on (111)A von Jo, Masafumi, Mano, Takaaki, Abbarchi, Marco, Kuroda, Takashi, Sakuma, Yoshiki, Sakoda, Kazuaki

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Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter‐Based AlN Templates von Mogami, Yosuke, Osawa, Atsushi, Ozaki, Kazuto, Tanioka, Yukitake, Maeoka, Atsushi, Itokazu, Yuri, Kuwaba, Shunsuke, Jo, Masafumi, Maeda, Noritoshi, Yaguchi, Hiroyuki, Hirayama, Hideki

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Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy von Ishida, Nobuyuki, Jo, Masafumi, Mano, Takaaki, Sakuma, Yoshiki, Noda, Takeshi, Fujita, Daisuke

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Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire von Jo, Masafumi, Morishita, Naoki, Okada, Narihito, Itokazu, Yuri, Kamata, Norihiko, Tadatomo, Kazuyuki, Hirayama, Hideki

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Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer von Jo, Masafumi, Mano, Takaaki, Sakoda, Kazuaki

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Milliwatt-power far-UVC AlGaN LEDs on sapphire substrates von Jo, Masafumi, Itokazu, Yuri, Hirayama, Hideki

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Dispersions of hole and electron g-factors in single InAs quantum rings evaluated using optically induced nuclear spin polarization von Kaji, Reina, Hozumi, Takahito, Hachiyama, Yuta, Tomii, Takuma, Sasakura, Hirotaka, Jo, Masafumi, Adachi, Satoru

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Efficiency droop in AlGaN crystal-based UVB LEDs in the context of electron blocking mechanism von Ajmal Khan, M., Maeda, Noritoshi, Rangaraju, Harshitha, Jo, Masafumi, Iimura, Kazuki, Hirayama, Hideki

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