Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate von Fukuda, Keisuke, Miyamoto, Satoru, Nakahara, Masahiro, Suzuki, Shota, Dhamrin, Marwan, Maeda, Kensaku, Fujiwara, Kozo, Uraoka, Yukiharu, Usami, Noritaka

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Fine line Al printing on narrow point contact opening for front side metallization von Tsuji, Kosuke, Suzuki, Shota, Morishita, Naoya, Kuroki, Takashi, Nakahara, Masahiro, Dhamrin, Marwan, Peng, Zih-Wei, Buck, Thomas, Usami, Noritaka

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Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste von Fukami, Shogo, Nakagawa, Yoshihiko, Hainey, Mel F., Gotoh, Kazuhiro, Kurokawa, Yasuyoshi, Nakahara, Masahiro, Dhamrin, Marwan, Usami, Noritaka

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Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding von Morita, Sho, Liang, Jianbo, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yoshitaka, Shigekawa, Naoteru

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Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding von Liang, Jianbo, Furuna, Katuya, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yositaka, Shigekawa, Naoteru

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Industry related approaches for bifacial p-type PERX solar cells von Fellmeth, Tobias, Meier, Sebastian, Lohmüller, Elmar, Wöhrle, Nico, Spribille, Alma, Lohmüller (neè Werner), Sabrina, Saint-Cast, Pierre, Wolf, Andreas, Clement, Florian, Rein, Stefan, Preu, Ralf, Nakahara, Masahiro, Dhamrin, Marwan, Knauss, Holger, Haverkamp, Helge, Steckemetz, Stefan, Bitnar, Bernd, Weber, Torsten, Palinginis, Phedon, Neuhaus, Holger

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Selective emitter formation process using single screen-printed phosphorus diffusion source von Uzum, Abdullah, Hamdi, Ali, Nagashima, Saori, Suzuki, Shota, Suzuki, Hidenori, Yoshiba, Shuhei, Dhamrin, Marwan, Kamisako, Koichi, Sato, Hiroaki, Katsuma, Katsuhiko, Kato, Kuniyasu

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Degradation Analysis of 38-Year-Old PV Modules Under the Weather Conditions of Sana'a-Yemen von Dahesh, Mohammed, Al-Matwakel, Mohammed, Dhamrin, Marwan

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Next Generation Technology Trends for Si Solar Cells von Dhamrin, Marwan, Suzuki, Shota

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Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application von Suzuki, Shota, Matsubara, Moeko, Minamiyama, Hideaki, Dhamrin, Marwan, Uraoka, Yukiharu

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In-situ X-ray diffraction analysis of SiGe liquid phase growth on Si using Al–Ge paste von Suzuki, Shota, Matsubara, Moeko, Minamiyama, Hideaki, Dhamrin, Marwan, Fujiwara, Yasufumi, Uraoka, Yukiharu

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Paste-based silver reduction for iTOPCon rear side metallization von Ourinson, Daniel, Brand, Andreas, Lorenz, Andreas, Dhamrin, Marwan, Tepner, Sebastian, Linse, Michael, Göttlicher, Nathalie, Haberstroh, René, Tsuji, Kosuke, Huyeng, Jonas D., Clement, Florian

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SiGe Epitaxial Growth on Si Substrate Using Al-Ge Paste von Suzuki, Shota, Matsubara, Moeko, Minamiyama, Hideaki, Dhamrin, Marwan, Uraoka, Yukiharu

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Impact of acetic acid exposure on metal contact degradation of different crystalline silicon solar cell technologies von Iqbal, Nafis, Li, Mengjie, Sakthivel, Tamil S., Mikeska, Kurt, Lu, Meijun, Nandakumar, Naomi, Duttagupta, Shubham, Dhamrin, Marwan, Tsuji, Kosuke, Bowden, Stuart, Augusto, André, Guan, Yuejun, Seal, Sudipta, Davis, Kristopher O.

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Screen-printing SiGe layer on Si substrate for III-V solar cell application von Suzuki, Shota, Matsubara, Moeko, Tsuji, Kosuke, Kuroki, Takashi, Minamiyama, Hideaki, Dhamrin, Marwan, Uraoka, Yukiharu

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Fine line screen-printing aluminum for front side p+ metallization of high efficiency solar cells von Tsuji, Kosuke, Suzuki, Shota, Dhamrin, Marwan, Adrian, Adrian, Buck, Thomas, Usami, Noritaka

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Contact control of Al/Si interface of Si solar cells by local contact opening method von Tsuji, Kosuke, Suzuki, Shota, Morishita, Naoya, Kuroki, Takashi, Nakahara, Masahiro, Dhamrin, Marwan, Adrian, Adrian, Peng, Zih-Wei, Buck, Thomas, Usami, Noritaka

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Impact of acetic acid exposure on metal contact degradation of different crystalline silicon solar cell technologies von Iqbal, Nafis, Li, Mengjie, Sakthivel, Tamil S., Mikeska, Kurt, Lu, Meijun, Nandakumar, Naomi, Duttagupta, Shubham, Dhamrin, Marwan, Tsuji, Kosuke, Bowden, Stuart, Augusto, André, Guan, Yuejun, Seal, Sudipta, Davis, Kristopher O.

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Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys von Yamada, Michihiro, Suzuki, Shota, Osaka, Ai I., Sumi, Kazuaki, Inoue, Takahiro, Hattori, Azusa N., Yamada, Shinya, Sawano, Kentarou, Dhamrin, Marwan, Hamaya, Kohei

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Applications of parallel dispensing in PV metallization von Pospischil, Maximilian, Riebe, Tim, Jimenez, Ana, Kuchler, Martin, Tepner, Sebastian, Geipel, Torsten, Ourinson, Daniel, Fellmeth, Tobias, Breitenbücher, Marian, Buck, Thomas, Dhamrin, Marwan, Clement, Florian

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