A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode von Bédécarrats, Thomas, Martinie, Sébastien, Vaysset, Adrien, Rozeau, Olivier

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Further Insights in TFET Operation von Villalon, Anthony, Le Carval, Gilles, Martinie, Sebastien, Le Royer, Cyrille, Jaud, Marie-Anne, Cristoloveanu, Sorin

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Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description von Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud

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A Review of Sharp-Switching Band-Modulation Devices von Cristoloveanu, Sorin, Lacord, Joris, Martinie, Sébastien, Navarro, Carlos, Gamiz, Francisco, Wan, Jing, Dirani, Hassan El, Lee, Kyunghwa, Zaslavsky, Alexander

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A comprehensive model on field-effect pnpn devices (Z2-FET) von Taur, Yuan, Lacord, Joris, Parihar, Mukta Singh, Wan, Jing, Martinie, Sebastien, Lee, Kyunghwa, Bawedin, Maryline, Barbe, Jean-Charles, Cristoloveanu, Sorin

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Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach von Bourdet, Léo, Li, Jing, Pelloux-Prayer, Johan, Triozon, François, Cassé, Mikaël, Barraud, Sylvain, Martinie, Sébastien, Rideau, Denis, Niquet, Yann-Michel

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Insight into carrier lifetime impact on band-modulation devices von Parihar, Mukta Singh, Lee, Kyung Hwa, Park, Hyung Jin, Lacord, Joris, Martinie, Sébastien, Barbé, Jean-Charles, Xu, Yue, El Dirani, Hassan, Taur, Yuan, Cristoloveanu, Sorin, Bawedin, Maryline

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Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part I von Borrel, Julien, Hutin, Louis, Rozeau, Olivier, Jaud, Marie-Anne, Martinie, Sébastien, Gregoire, Magali, Dubois, Emmanuel, Vinet, Maud

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Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM von Martinie, Sebastien, Autran, Jean-Luc, Sauze, Sebastien, Munteanu, Daniela, Uznanski, Slawosz, Roche, Philippe, Gasiot, Gilles

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Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage von Diaz Llorente, Carlos, G. Theodorou, Christoforos, Colinge, Jean-Pierre, Cristoloveanu, Sorin, Martinie, Sebastien, Le Royer, Cyrille, Ghibaudo, Gerard, Vinet, Maud

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Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation von Martinie, S., Munteanu, D., Le Carval, G., Autran, J.-L.

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Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level von Martinie, S., Autran, J. L., Munteanu, D., Wrobel, F., Gedion, M., Saigne, F.

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Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits von Martinie, S., Le Carval, G., Munteanu, D., Soliveres, S., Autran, J.-L.

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Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices von Martinie, Sébastien, Munteanu, Daniela, Le Carval, Gilles, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc

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Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation von Martinie, Sébastien, Lacord, Joris, Lee, Kyunghwa, Bawedin, Maryline, Cristoloveanu, Sorin

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New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport von Martinie, S., Munteanu, D., Le Carval, G., Autran, J.-L.

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Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices von Martinie, Sébastien, Munteanu, Daniela, Carval, Gilles Le, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc

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Total Ionizing Dose Effects in FDSOI Compact Model for IC Design von Rostand, N., Martinie, S., Gaillardin, M., Marcandella, C., Rozeau, O., Lacord, J., Barbe, J.-C., Poiroux, T., Hubert, G.

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On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature von Ghibaudo, G., Aouad, M., Casse, M., Martinie, S., Poiroux, T., Balestra, F.

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(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities von Gaben, Loïc, Barraud, Sylvain, Samson, Marie-Pierre, Jaud, Marie-Anne, Martinie, Sébastien, Rozeau, Olivier, Lacord, Joris, Arvet, Christian, Vizioz, Christian, Bustos, Jessy, Dallery, Jacques-Alexandre, Pauliac, Sébastien, Balan, Viorel, Euvrard-Colnat, Catherine, Perrot, Cédric, Loup, Virginie, Besson, Pascal, Hartmann, Jean-Michel, Monfray, Stéphane, Boeuf, Frédéric, Skotnicki, Thomas, Balestra, Francis, Vinet, Maud

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