Optical-pumping injection cavity (OPIC) mid-IR "W" lasers with high efficiency and low loss von Bewley, W.W., Felix, C.L., Vurgaftman, I., Stokes, D.W., Meyer, J.R., Lee, H., Martinelli, R.U.

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Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers von Bewley, W.W., Vurgaftman, I., Bartolo, R.E., Jurkovic, M.J., Felix, C.L., Meyer, J.R., Lee, H., Martinelli, R.U., Turner, G.W., Manfra, M.J.

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Thermophotovoltaic system configurations and spectral control von Fraas, L M, Avery, J E, Huang, H X, Martinelli, R U

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1.95-/spl mu/m strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers von Martinelli, R.U., Menna, R.J., Olsen, G.H., Vermaak, J.S.

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High-power 2.3-μm GaSb-based linear laser array von Shterengas, L., Belenky, G.L., Gourevitch, A., Donetsky, D., Kim, J.G., Martinelli, R.U., Westerfeld, D.

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InGaAsSb thermophotovoltaic diode: Physics evaluation von Charache, G. W., Baldasaro, P. F., Danielson, L. R., DePoy, D. M., Freeman, M. J., Wang, C. A., Choi, H. K., Garbuzov, D. Z., Martinelli, R. U., Khalfin, V., Saroop, S., Borrego, J. M., Gutmann, R. J.

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High-power 2.3 µm laser arrays emitting 10 W CW at room temperature von Belenky, G.L., Kim, J.G., Shterengas, L., Gourevitch, A., Martinelli, R.U.

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High-power 2.3-[mu]m GaSb-based linear laser array von Shterengas, L, Belenky, G.L, Gourevitch, A, Donetsky, D, Kim, J.G, Martinelli, R.U, Westerfeld, D

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Mid-infrared photonic-crystal distributed-feedback lasers von Bewley, W.W., Felix, C.L., Vurgaftman, I., Bartolo, R.E., Lindle, J.R., Meyer, J.R., Lee, H., Martinelli, R.U.

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InGaAs/InAsPSb diode lasers with output wavelengths at 2. 52. mu. m von Martinelli, R.U., Zamerowski, T.J.

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Laser diode based oxygen sensing: A comparison of VCSEL and DFB laser diodes emitting in the 762 nm region von Weldon, V., O'Gorman, J., Pérez-Camacho, J.J., McDonald, D., Hegarty, J., Connolly, J.C., Morris, N.A., Martinelli, R.U., Abeles, J.H.

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Type-II antimonide quantum wells for mid-infrared lasers von Yang, M.J., Meyer, J.R., Bewley, W.W., Felix, C.L., Vurgaftman, I., Barvosa-Carter, W., Whitman, L.J., Bartolo, R.E., Stokes, D.W., Lee, H., Martinelli, R.U.

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Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser von Morris, N.A., Connolly, J.C., Martinelli, R.U., Abeles, J.H., Cook, A.L.

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1.95-μm strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers von Martinelli, R.U., Menna, R.J., Olsen, G.H., Vermaak, J.S.

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Avalanche gain in InAs y P/sub 1-y/ (0.1<y<0.3) photodetectors von Kim, D.S., Forrest, S.R., Olsen, G.H., Lange, M.J., Martinelli, R.U., Di Giuseppe, N.J.

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Avalanche gain in InAsyP/sub 1-y/ (0.1<y<0.3) photodetectors von Kim, D.S., Forrest, S.R., Olsen, G.H., Lange, M.J., Martinelli, R.U., Di Giuseppe, N.J.

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2.78 μm InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxy von Lee, H., York, P.K., Menna, R.J., Martinelli, R.U., Garbuzov, D., Narayan, S.Y.

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Design and characterization of 200-mW-class distributed feedback lasers at 1.55 /spl mu/m von Sugg, A.R., Abeles, J.H., Braun, A.M., Maiorov, M., Menna, R.J., DiMarco, L.A., Martinelli, R.U., Connolly, J.C.

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Epitaxial growth of InP 0.88Sb 0.12 using a stibine generator von Menna, R.J., Capewell, D.R., Martinelli, R.U., Ayers, W., Moulton, R., Palmer, J., Olsen, G.

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Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers von BOUR, D. P, MARTINELLI, R. U, GILBERT, D. B, ELBAUM, L, HARVEY, M. G

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