Plasma sealing of a low-K dielectric polymer von Martin Hoyas, A., Schuhmacher, J., Whelan, C.M., Celis, J.P., Maex, K.

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Using scaling laws to understand the growth mechanism of atomic layer deposited WNxCy films on methyl-terminated surfaces von Martin Hoyas, A., Schuhmacher, J., Whelan, C. M., Fernandez Landaluce, T., Vanhaeren, D., Maex, K., Celis, J. P.

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Atomic layer deposited WNxCy films growth on SiC surfaces von HOYAS, A. Martin, WHELAN, C. M, SCHUHMACHER, J, MAEX, K, CELIS, J. P

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Characterization of atomic layer deposited nanoscale structure on dense dielectric substrates by X-ray reflectivity von Travaly, Y., Schuhmacher, J., Hoyas, A. Martin, Abell, T., Sutcliffe, V., Jonas, A.M., Van Hove, M., Maex, K.

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Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films von Hoyas, A. Martin, Schuhmacher, J., Shamiryan, D., Waeterloos, J., Besling, W., Celis, J. P., Maex, K.

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Using scaling laws to understand the growth mechanism of atomic layer deposited WNxCy films on methyl-terminated surfaces von Hoyas, A. Martin, Schuhmacher, J, Whelan, C.M, Fernandez Landaluce, T, Vanhaeren, D, Maex, Karen, Celis, Jean-Pierre

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Using scaling laws to understand the growth mechanism of atomic layer deposited W N x C y films on methyl-terminated surfaces von Martin Hoyas, A., Schuhmacher, J., Whelan, C. M., Fernandez Landaluce, T., Vanhaeren, D., Maex, K., Celis, J. P.

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Effect of plasma treatments on a low- k dielectric polymer surface von Hoyas, A. Martin, Schuhmacher, J., Whelan, C. M., Baklanov, M. R., Carbonell, L., Celis, J. P., Maex, K.

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The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films von Martin Hoyas, A., Travaly, Y., Schuhmacher, J., Sajavaara, T., Whelan, C. M., Eyckens, B., Richard, O., Giangrandi, S., Brijs, B., Vandervorst, W., Maex, K., Celis, J. P., Jonas, A. M., Vantomme, A.

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Atomic layer deposited WN(x)C(y) films growth on SiC surfaces von Martin Hoyas, A, Whelan, C M, Scrmhmacher, J, Maex, K, Celis, J P

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Atomic layer deposited WN x C y films growth on SiC surfaces von Martin Hoyas, A., Whelan, C.M., Schuhmacher, J., Maex, K., Celis, J.P.

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Effect of Surface Reactive Site Density and Reactivity on the Growth of Atomic Layer Deposited WNxCy Films von Hoyas, A Martin, Whelan, C M, Schuhmacher, J, Celis, J P, Maex, K

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The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited W N x C y films von Martin Hoyas, A., Travaly, Y., Schuhmacher, J., Sajavaara, T., Whelan, C. M., Eyckens, B., Richard, O., Giangrandi, S., Brijs, B., Vandervorst, W., Maex, K., Celis, J. P., Jonas, A. M., Vantomme, A.

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The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNₓCy films von Martin Hoyas, A, Travaly, Y, Schuhmacher, J, Sajavaara, T, Whelan, C.M, Eyckens, B, Richard, O, Giangrandi, Simone, Brijs, B, Vandervorst, Wilfried, Maex, Karen, Celis, Jean-Pierre, Jonas, A.M, Vantomme, André

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Implementation of Atomic Layer Deposition in Advanced Semiconductor Processes von Schaekers, Marc, Van Ammel, Annemie, Travaly, Youssef, Delabie, Annelies, Martin Hoyas, Ana, Zhao, Chao

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Effect of Surface Reactive Site Density and Reactivity on the Growth of Atomic Layer Deposited WN[sub x]C[sub y] Films von Hoyas, A. Martin, Whelan, C. M., Schuhmacher, J., Celis, J. P., Maex, K.

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Turbulent Couette flow up to von Hoyas, Sergio, Oberlack, Martin

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Turbulent Couette flow up to ${{Re}}_\tau =2000 von Hoyas, Sergio, Oberlack, Martin

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Turbulence Statistics of Arbitrary Moments of Wall-Bounded Shear Flows: A Symmetry Approach von Oberlack, Martin, Hoyas, Sergio, Kraheberger, Stefanie V, Alcántara-Ávila, Francisco, Laux, Jonathan

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Hidradenitis suppurativa secondary to treatment with a gamma secretase inhibitor von Ríos‐Viñuela, E., Hoyas‐Rodríguez, I., Cullen‐Aravena, D., Martín‐Broto, J., Hindi, N., Eraña, I., Requena, L.

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