150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon von Marti, D., Tirelli, S., Alt, A. R., Roberts, J., Bolognesi, C. R.

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High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz von Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Fluckiger, Ralf, Marti, Diego, Ebrahimi, Mojtaba, Ostinelli, Olivier, Bolognesi, Colombo R.

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RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110) von Marti, Diego, Bolognesi, C. R, Cordier, Yvon, Chmielowska, Magdalena, Ramdani, Mohammed

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110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates von Marti, Diego, Vetter, Mathias, Alt, Andreas R, Benedickter, Hansruedi, Bolognesi, C. R

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Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates von Sun, Haifeng, Alt, Andreas R., Marti, Diego, Vetter, Mathias, Benedickter, Hansruedi, Bolognesi, C. R.

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94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts von Marti, Diego, Tirelli, Stefano, Teppati, Valeria, Lugani, Lorenzo, Carlin, Jean-Francois, Malinverni, Marco, Grandjean, Nicolas, Bolognesi, C. R.

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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz von Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

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Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes von Arabhavi, Akshay M., Chaudhary, Rimjhim, Fluckiger, Ralf, Marti, Diego, Hamzeloui, Sara, Ciabattini, Filippo, Quan, Wei, Leich, Martin, Ostinelli, Olivier, Bolognesi, C. R.

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A 16-GHz Bandwidth Cryogenic IF Amplifier With 4-K Noise Temperature for Sub-mm Radio-Astronomy Receivers von Lopez-Fernandez, Isaac, Gallego-Puyol, Juan Daniel, Diez, Carmen, Malo-Gomez, Inmaculada, Amils, Ricardo Ignacio, Fluckiger, Ralf, Marti, Diego, Hesper, Ronald

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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz von Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

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Fully Passivated AlInN/GaN HEMTs With f/f of 205/220 GHz von Tirelli, S., Marti, D., Haifeng Sun, Alt, A. R., Carlin, J.-F, Grandjean, N., Bolognesi, C. R.

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W -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon von Marti, Diego, Lugani, Lorenzo, Carlin, Jean-Francois, Malinverni, Marco, Grandjean, Nicolas, Bolognesi, C. R.

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AlInN-Based HEMTs for Large-Signal Operation at 40 GHz von Tirelli, Stefano, Lugani, Lorenzo, Marti, Diego, Carlin, Jean-Francois, Grandjean, Nicolas, Bolognesi, C. R.

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Fully Passivated AlInN/GaN HEMTs With fT/fMAX of 205/220 GHz von TIRELLI, Stefano, MARTI, Diego, HAIFENG SUN, ALT, Andreas R, CARLIN, Jean-François, GRANDJEAN, Nicolas, BOLOGNESI, C. R

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[Formula Omitted]-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon von Marti, Diego, Lugani, Lorenzo, Carlin, Jean-Francois, Malinverni, Marco, Grandjean, Nicolas, Bolognesi, C R

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High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm 2 Power Density at 94 GHz von Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Fluckiger, Ralf, Marti, Diego, Ebrahimi, Mojtaba, Ostinelli, Olivier, Bolognesi, Colombo R.

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A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques von Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.

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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies von Tirelli, S., Marti, D., Haifeng Sun, Alt, A.R., Benedickter, H., Piner, E.L., Bolognesi, C.R.

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Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation von Haifeng Sun, Alt, A. R., Tirelli, S., Marti, D., Benedickter, H., Piner, E., Bolognesi, C. R.

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AlInN-Based HEMTs for Large-Signal Operation at 40 GHz : GaN ELECTRONIC DEVICES von TIRELLI, Stefano, LUGANI, Lorenzo, MARTI, Diego, CARLIN, Jean-François, GRANDJEAN, Nicolas, BOLOGNESI, C. R

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