Direct Mapping of Charge Distribution during Lithiation of Ge Nanowires Using Off-Axis Electron Holography von Gan, Zhaofeng, Gu, Meng, Tang, Jianshi, Wang, Chiu-Yen, He, Yang, Wang, Kang L, Wang, Chongmin, Smith, David J, McCartney, Martha R

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β-Ga2O3 on Si (001) grown by plasma-assisted MBE with γ-Al2O3 (111) buffer layer: Structural characterization von Hadamek, Tobias, Posadas, Agham B., Al-Quaiti, Fatima, Smith, David J., McCartney, Martha R., Demkov, Alexander A.

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Atomic and electronic structure of the ferroelectric BaTiO3/Ge(001) interface von Fredrickson, Kurt D., Ponath, Patrick, Posadas, Agham B., McCartney, Martha R., Aoki, Toshihiro, Smith, David J., Demkov, Alexander A.

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Observation of Hole Accumulation in Ge/Si Core/Shell Nanowires Using off-Axis Electron Holography von Li, Luying, Smith, David J, Dailey, Eric, Madras, Prashanth, Drucker, Jeff, McCartney, Martha R

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Determination of Polarization-Fields Across Polytype Interfaces in InAs Nanopillars von Li, Luying, Gan, Zhaofeng, McCartney, Martha R., Liang, Hanshuang, Yu, Hongbin, Yin, Wan-Jian, Yan, Yanfa, Gao, Yihua, Wang, Jianbo, Smith, David J.

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Direct Observation of Large Atomic Polar Displacements in Epitaxial Barium Titanate Thin Films von Wu, HsinWei, Lu, Sirong, Aoki, Toshihiro, Ponath, Patrick, Wang, Jian, Young, Chadwin, Ekerdt, John G., McCartney, Martha R., Smith, David J.

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Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts von Li, Luying, Jin, Lei, Wang, Jianbo, Smith, David J., Yin, Wan-Jian, Yan, Yanfa, Sang, Hongqian, Choy, Wallace C. H., McCartney, Martha R.

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Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination von Gan, Zhaofeng, DiNezza, Michael, Zhang, Yong-Hang, Smith, David J., McCartney, Martha R.

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Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 von Cornuelle, Evan M., Growden, Tyler A., Storm, David F., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Gokhale, Vikrant, Ruppalt, Laura B., Champlain, James G., Peri, Prudhvi, McCartney, Martha R., Smith, David J., Meyer, David J., Berger, Paul R.

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Quantitative measurement of nanoscale electrostatic potentials and charges using off-axis electron holography: Developments and opportunities von McCartney, Martha R., Dunin-Borkowski, Rafal E., Smith, David J.

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Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region von Park, Suho, Nguyen, Phuc Dinh, Kim, Yeongho, Jeon, Jiyeon, McCartney, Martha R., Smith, David J., Kim, Minkyeong, Kim, Dongwan, Chun, Byong Sun, Lee, Sang Jun

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Formation of Twin-Free Single Phase β-In 2 Se 3 Layers via Selenium Diffusion into InP(111)B Substrate von Wickramasinghe, Kaushini S, Forrester, Candice R, McCartney, Martha R, Smith, David J, Tamargo, Maria C

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Formation of Twin-Free Single Phase β‑In2Se3 Layers via Selenium Diffusion into InP(111)B Substrate von Wickramasinghe, Kaushini S., Forrester, Candice R., McCartney, Martha R., Smith, David J., Tamargo, Maria C.

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Epitaxial growth of β-Ga2O3 on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy von Hadamek, Tobias, Posadas, Agham B., Al-Quaiti, Fatima, Smith, David J., McCartney, Martha R., Dombrowski, Eric, Demkov, Alexander A.

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Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown von Gilankar, Advait, Islam, Ahmad Ehteshamul, McCartney, Martha R., Katta, Abishek, Das, Nabasindhu, Smith, David J., Kalarickal, Nidhin Kurian

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Above 400-K robust perpendicular ferromagnetic phase in a topological insulator von Tang, Chi, Chang, Cui-Zu, Zhao, Gejian, Liu, Yawen, Jiang, Zilong, Liu, Chao-Xing, McCartney, Martha R, Smith, David J, Chen, Tingyong, Moodera, Jagadeesh S, Shi, Jing

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Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer von Ince, Fatih F., Frost, Mega, Shima, Darryl, Rotter, Thomas J., Addamane, Sadhvikas, McCartney, Martha R., Smith, David J., Canedy, Chadwick L., Tomasulo, Stephanie, Kim, Chul Soo, Bewley, William W., Vurgaftman, Igor, Meyer, Jerry R., Balakrishnan, Ganesh

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Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography von Jose, Anitha, Al-Turk, Sarry, Ruda, Harry E, Watkins, Simon P, McCartney, Martha R, Cordoba, Cristina, Kavanagh, Karen L

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Compositional Control and Optimization of Molecular Beam Epitaxial Growth of (Sb2Te3)1–x (MnSb2Te4) x Magnetic Topological Insulators von Levy, Ido, Forrester, Candice, Deng, Haiming, Roldan-Gutierrez, Manuel, McCartney, Martha R, Smith, David J, Testelin, Christophe, Krusin-Elbaum, Lia, Tamargo, Maria C

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Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting von Park, Suho, McCartney, Martha R, Smith, David J, Jeon, Jiyeon, Kim, Yeongho, Lee, Sang Jun

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