40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology von Zhang, Y., Whelan, C.S., Leoni, R., Marsh, P.F., Hoke, W.E., Hunt, J.B., Laighton, C.M., Kazior, T.E.

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Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates von Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

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High indium metamorphic HEMT on a GaAs substrate von Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.

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Properties of metamorphic materials and device structures on GaAs substrates von Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.

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Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates von Lubyshev, D., Liu, W. K., Stewart, T. R., Cornfeld, A. B., Fang, X. M., Xu, X., Specht, P., Kisielowski, C., Naidenkova, M., Goorsky, M. S., Whelan, C. S., Hoke, W. E., Marsh, P. F., Mirecki Millunchick, J., Svensson, S. P.

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Reliability of metamorphic HEMTs on GaAs substrates von Marsh, P.F, Whelan, C.S, Hoke, W.E, Leoni III, R.E, Kazior, T.E

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Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density von Whelan, C.S., Hoke, W.F., McTaggart, R.A., Lardizabal, M., Lyman, P.S., Marsh, P.F., Kazior, T.E.

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Low noise In0.32(AlGa)0.68As/In0.43Ga0.57 As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density von Whelan, C.S, Hoke, W.F, McTaggart, R.A, Lardizabal, M, Lyman, P.S, Marsh, P.F, Kazior, T.E

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GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications von Whelan, C.S., Marsh, P.F., Hoke, W.E., McTaggart, R.A., McCarroll, C.P., Kazior, T.E.

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Low noise metamorphic HEMT devices and amplifiers on GaAs substrates von Marsh, P.F., Chu, S.L.G., Lardizabal, S.M., Leoni, R.E., Kang, S., Wohlert, R., Bowlby, A.M., Hoke, W.E., McTaggart, R.A., Whelan, C.S., Lemonias, P.J., McIntosh, P.M., Kazior, T.E.

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Optimization of MOVPE grown In/sub x/Al/sub 1-x/As/In/sub 0.53/Ga/sub 0.47/As planar heteroepitaxial Schottky diodes for terahertz applications von Kyushik Hong, Marsh, P.F., Geok-Ing Ng, Pavlidis, D., Chang-Hee Hong

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A comparison of channel indium content in low noise metamorphic HEMTs with In/sub x/Ga/sub 1-x/As (0.3<X/spl les/0.6) von Whelan, C.S., Lardizabal, S.M., Buhles, P.M., Hoke, W.E., Marsh, P.F., McTaggart, R.A., McCarroll, C.P., Kazior, T.E.

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MBE growth of high quality metamorphic HEMT structures on GaAs von Lubyshev, D., Liu, W.K., Stewart, T., Cornfeld, A.B., Patton, J., Millunchick, J.M., Hoke, W., Marsh, P.F., Meaton, C., Nichols, K., Svensson, S.P.

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Reliability of metamorphic HEMTs on GaAs substrates von Marsh, P.F., Whelan, C.S., Hoke, W.E., Leoni, R.E., Kazior, T.E.

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Reliability of metamorphic HEMTs on GaAs substrates von Marsh, P.F., Whelan, C.S., Hoke, W.E., Leoni, R.E., Kazior, T.E.

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High breakdown voltage InAlGaAs/In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT for microwave and MM-wave power applications von Whelan, C.S., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Marsh, P.F., Leoni, R.E., Lichwala, S.J., Kazior, T.E.

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High power and gain at 35 GHz utilizing an InAlGaAs-In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT von Whelan, C.S., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Marsh, P.F., Lichwala, S.J., Kazior, T.E.

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High indium metamorphic HEMT on a GaAs substrate von Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.

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A DC-45 GHz metamorphic HEMT traveling wave amplifier von Leoni, R.E., Lichwala, S.J., Hunt, J.G., Whelan, C.S., Marsh, P.F., Hoke, W.E., Kazior, T.E.

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Properties of metamorphic materials and device structures on GaAs substrates von Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Jang, J.H., Adesida, I., Chang, K.L., Hsieh, K.C.

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