Crevasse and rift detection in Antarctica from TerraSAR-X satellite imagery von Marsh, O.J., Price, D., Courville, Z.R., Floricioiu, D.

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A method of calculating ice-shelf surface velocity using ICESat altimetry von Marsh, O.J., Rack, W.

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Interannual variability of the S=1 and S=2 components of the semidiurnal tide in the Antarctic MLT von Hibbins, R.E., Marsh, O.J., McDonald, A.J., Jarvis, M.J.

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Dependence of the I-V curve of a metal insulator semiconductor switch on insulator thickness-an experimental and theoretical investigation von Pettersson, P.O., Zur, A., Daniel, E.S., Levy, H.J., Marsh, O.J., McGill, T.C.

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Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon von Akutagawa, W., Dunlap, H.L., Hart, R., Marsh, O. J.

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Specular reflectance and surface roughness of silicon on sapphire von Robertson, G.D., Baron, R., Vasudev, P.K., Marsh, O.J.

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Shallow defect levels in neutron-irradiated p -type extrinsic silicon von Young, M. H., Marsh, O.J., Baron, R.

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The detection sensitivity of heavy impurities in Si using 280 keV He 2+ and C 2+ back-scattering von Hart, R.R., Dunlap, H.L., Mohr, A.J., Marsh, O.J.

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Ion-induced migration of Cu into Si von Hart, R. R., Dunlap, H. L., Marsh, O. J.

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Silicon nanoelectronics: prospects and promises von McGill, T.C., Levy, H.R., Daniel, E.S., Pettersson, P.O., Bridger, P.M., Piquette, E.C., Jones, J.T., Marsh, O.J.

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LATTICE DISORDER PRODUCED IN Si BY 40-keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR von Hart, R. R., Marsh, O. J.

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Technique used in Hall effect analysis of ion implanted Si and Ge von Johansson, N.G.E., Mayer, J.W., Marsh, O.J.

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CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 - keV ANTIMONY ION BOMBARDMENT OF SILICON von Hart, R. R., Marsh, O. J.

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The detection sensitivity of heavy impurities in Si using 280 keV He2+ and C2+ back-scattering von Hart, R.R., Dunlap, H.L., Mohr, A.J., Marsh, O.J.

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IIa-8 properties of gallium-, aluminum-, and indium-doped silicon as extrinsic detector materials von Baron, R., Young, M.H., Baukus, J.P., Sheets, M.J., Marsh, O.J.

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The presence of deep levels in ion implanted p-n junctions in GaAs and their effect on the electrical characteristics von Hunsperger, R.G., Marsh, O.J., Mead, C.A.

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Effects of Al Films on Ion-Implanted Si von Lee, D. H., Hart, R. R., Marsh, O. J.

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Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al von Hart, R. R., Lee, D. H., Marsh, O. J.

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Negative resistance behavior in double injection structures von Marsh, O.J., Baron, R., Mayer, J.W.

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Disorder produced in SiC by ion bombardment von Hart, R. R., Dunlap, H. L., Marsh, O. J.

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