Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing von PARIKH, N. R, HUNN, J. D, MCGUCKEN, E, SWANSON, M. L, WHITE, C. W, RUDDER, R. A, MALTA, D. P, POSTHILL, J. B, MARKUNAS, R. J

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Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment von RUDDER, R. A, HUDSON, G. C, POSTHILL, J. B, THOMAS, R. E, MARKUNAS, R. J

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On the feasibility of growing dilute CxSi1-X epitaxial alloys von POSTHILL, J. B, RUDDER, R. A, HATTANGADY, S. V, FOUNTAIN, G. G, MARKUNAS, R. J

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Activation energy and mechanism of CO desorption from (100) diamond surface von FRENKLACH, M, HUANG, D, THOMAS, R. E, RUDDER, R. A, MARKUNAS, R. J

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Chemical vapor deposition of diamond films from water vapor rf-plasma discharges von RUDDER, R. A, HUDSON, G. C, POSTHILL, J. B, THOMAS, R. E, HENDRY, R. C, MALTA, D. P, MARKUNAS, R. J, HUMPHREYS, T. P, NEMANICH, R. J

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Low-defect-density germanium on silicon obtained by a novel growth phenomenon von MALTA, D. P, POSTHILL, J. B, MARKUNAS, R. J, HUMPHREYS, T. P

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Low interface state density SiO2 deposited at 300°C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces von FOUNTAIN, G. G, RUDDER, R. A, HATTANGADY, S. V, MARKUNAS, R. J, LINDORME, P. S

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The role of an ultrathin silicon interlayer at the SiO2-Ge interface von HATTANGADY, S. V, MANTINI, M. J, FOUTAIN, G. G, RUDDER, R. A, MARKUNAS, R. J

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Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures von Graham, R. J., Posthill, J. B., Rudder, R. A., Markunas, R. J.

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Method of fabricating a free-standing diamond single crystal using growth from the vapor phase von Posthill, J. B., Malta, D. P., Humphreys, T. P., Hudson, G. C., Thomas, R. E., Rudder, R. A., Markunas, R. J.

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Demonstration of a method to fabricate a large-area diamond single crystal von Posthill, J.B., Malta, D.P., Hudson, G.C., Thomas, R.E., Humphreys, T.P., Hendry, R.C., Rudder, R.A., Markunas, R.J.

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Secondary electron emission enhancement and defect contrast from diamond following exposure to atomic hydrogen von Malta, D. P., Posthill, J. B., Humphreys, T. P., Thomas, R. E., Fountain, G. G., Rudder, R. A., Hudson, G. C., Mantini, M. J., Markunas, R. J.

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Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films von Rudder, R. A., Fountain, G. G., Markunas, R. J.

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Low-temperature annealing of As-implanted Ge von HATTANGADY, S. V, FOUNTAIN, G. G, NICOLLIAN, E. H, MARKUNAS, R. J

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Formation of diamond films from low pressure radio frequency induction discharges von Rudder, R.A., Hudson, G.C., Hendry, R.C., Thomas, R.E., Posthill, J.B., Markunas, R.J.

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Effect of rf power on remote-plasma deposited SiO2 films von HATTANGADY, S. V, ALLEY, R. G, FOUNTAIN, G. G, MARKUNAS, R. J, LUCOVSKY, G, TEMPLE, D

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Gating of germanium surfaces using pseudomorphic silicon interlayers von VITKAVAGE, D. J, FOUNTAIN, G. G, RUDDER, R. A, HATTANGADY, S. V, MARKUNAS, R. J

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The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces von Humphreys, T. P., Thomas, R. E., Malta, D. P., Posthill, J. B., Mantini, M. J., Rudder, R. A., Hudson, G. C., Markunas, R. J., Pettenkofer, C.

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Effect of thin interfacial SiO2 films on metal contacts to B-doped diamond films von VENKATESAN, V, DAS, K, FOUNTAIN, G. G, RUDDER, R. A, POSTHILL, J. B, MARKUNAS, R. J

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Interface engineering with pseudormorphic interlayers : Ge metal-insulator-semiconductor structures von HATTANGADY, S. V, FOUNTAIN, G. G, RUDDER, R. A, MANTINI, M. J, VITKAVAGE, D. J, MARKUNAS, R. J

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