Optical gain in GaAsBi/GaAs quantum well diode lasers von Marko, Igor P., Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O’Reilly, Eoin P., Sweeney, Stephen J.

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GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics von Broderick, Christopher A., Jin, Shirong, Marko, Igor P., Hild, Konstanze, Ludewig, Peter, Bushell, Zoe L., Stolz, Wolfgang, Rorison, Judy M., O’Reilly, Eoin P., Volz, Kerstin, Sweeney, Stephen J.

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The Impact of Band Bending on the Thermal Behaviour of Gain in Type-II GaAs-Based "W"-Lasers von Duffy, Dominic A., Marko, Igor P., Fuchs, Christian, Stolz, Wolfgang, Sweeney, Stephen J.

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A Multifaceted Ferrocene Interlayer for Highly Stable and Efficient Lithium Doped Spiro‐OMeTAD‐based Perovskite Solar Cells von Webb, Thomas, Liu, Xueping, Westbrook, Robert J.E., Kern, Stefanie, Sajjad, Muhammad T., Jenatsch, Sandra, Jayawardena, K. D. G. Imalka, Perera, W. Hashini K., Marko, Igor P., Sathasivam, Sanjayan, Li, Bowei, Yavari, Mozhgan, Scurr, David J., Alexander, Morgan R., Macdonald, Thomas J., Haque, Saif A., Sweeney, Stephen J., Zhang, Wei

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Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration von Eales, Timothy D., Marko, Igor P., Schulz, Stefan, O’Halloran, Edmond, Ghetmiri, Seyed, Du, Wei, Zhou, Yiyin, Yu, Shui-Qing, Margetis, Joe, Tolle, John, O’Reilly, Eoin P., Sweeney, Stephen J.

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The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Mid-Infrared von Eales, Timothy D., Marko, Igor P., Adams, Alf R., Andrejew, Alexander, Vizbaras, Kristijonas, Sweeney, Stephen J.

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Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers von Eales, Timothy D, Marko, Igor P, Adams, Alfred R, Meyer, Jerry R, Vurgaftman, Igor, Sweeney, Stephen J

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The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers von Marko, Igor P, Sweeney, Stephen J

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Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon von Fitch, Christopher R., Baltusis, Aidas, Marko, Igor P., Jung, Daehwan, Norman, Justin C., Bowers, John E., Sweeney, Stephen J.

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High-bandwidth perovskite photonic sources on silicon von Ren, Aobo, Wang, Hao, Dai, Linjie, Xia, Junfei, Bai, Xinyu, Butler-Caddle, Edward, Smith, Joel A., Lai, Huagui, Ye, Junzhi, Li, Xiang, Zhan, Shijie, Yao, Chunhui, Li, Zewei, Tang, Mingchu, Liu, Xueping, Bi, Jinxin, Li, Bowei, Kai, Shen, Chen, Rui, Yan, Han, Hong, Jintao, Yuan, Liming, Marko, Igor P., Wonfor, Adrian, Fu, Fan, Hindmarsh, Steven A., Sanchez, Ana M., Lloyd-Hughes, James, Sweeney, Stephen J., Rao, Akshay, Greenham, Neil C., Wu, Jiang, Li, Yanrong, Cheng, Qixiang, Friend, Richard H., Penty, Richard V., White, Ian H., Snaith, Henry J., Zhang, Wei

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Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications von Duffy, Dominic A, Marko, Igor P, Fuchs, Christian, Eales, Timothy D, Lehr, Jannik, Stolz, Wolfgang, Sweeney, Stephen J

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Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers von Marko, Igor P, Adams, Alf R, Massé, Nicolas F, Sweeney, Stephen J

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The influence of temperature on the recombination processes in blue and green InGaN LEDs von Crutchley, Benjamin G., Marko, Igor P., Sweeney, Stephen J.

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Progress Toward III-V Bismide Alloys for Near- and Midinfrared Laser Diodes von Marko, Igor P., Sweeney, Stephen J.

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Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers von Eales, Timothy David, Marko, Igor P., Ikyo, Barnabas Achakpa, Adams, Alfred R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus-Christian, Sweeney, Stephen J.

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Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications von Lim, Leh Woon, Patil, Pallavi, Marko, Igor P, Clarke, Edmund, Sweeney, Stephen J, Ng, Jo Shien, David, John P R, Tan, Chee Hing

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A Multifaceted Ferrocene Interlayer for Highly Stable and Efficient Lithium Doped Spiro‐OMeTAD‐based Perovskite Solar Cells von Webb, Thomas, Liu, Xueping, Westbrook, Robert J. E., Kern, Stefanie, Sajjad, Muhammad T., Jenatsch, Sandra, Jayawardena, K. D. G. Imalka, Perera, W. Hashini K., Marko, Igor P., Sathasivam, Sanjayan, Li, Bowei, Yavari, Mozhgan, Scurr, David J., Alexander, Morgan R., Macdonald, Thomas J., Haque, Saif A., Sweeney, Stephen J., Zhang, Wei

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Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers von Sayid, Sayid A., Marko, Igor P., Sweeney, Stephen J., Barrios, Pedro, Poole, Philip J.

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Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure von Marko, Igor P., Adams, Alfred R., Sweeney, Stephen J., Teissier, Roland, Baranov, Alexei N., Tomić, Stanko

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GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications von Siew Li Tan, Shiyong Zhang, Wai Mun Soong, Yu Ling Goh, Tan, Lionel J. J., Jo Shien Ng, David, John P. R., Marko, Igor P., Adams, Alfred R., Sweeney, Stephen J., Allam, Jeremy

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