Fabrication and accelerated hermeticity testing of an on-wafer package for RF MEMS von Margomenos, A., Katehi, L.P.B.

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Ultra-wideband, high-dynamic range, low loss GaN HEMT mixer von Kang, J, Kurdoghlian, A, Margomenos, A, Moyer, H.P, Brown, D, McGuire, C

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Precision fabrication techniques and analysis on high-Q evanescent-mode resonators and filters of different geometries von Xun Gong, Margomenos, A., Bosui Liu, Hajela, S., Katehi, L.P.B., Chappell, W.J.

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Low-loss CPW on low-resistivity Si substrates with a micromachined polyimide interface layer for RFIC interconnects von Ponchak, G.E., Margomenos, A., Katehi, L.P.B.

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Multilayer, low-parasitic, interconnection scheme for advanced submillimetre-wave GaN circuits von Margomenos, A, Shinohara, K, Regan, D.C, Corrion, A.L, Brown, D.F, Tang, Y, Butler, C, Schmitz, A, Robinson, J.F, Kim, S, McGuire, C, Micovic, M

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Multiwafer vertical interconnects for three-dimensional integrated circuits von Lahiji, R.R., Herrick, K.J., Yongshik Lee, Margomenos, A., Mohammadi, S., Katehi, L.P.B.

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Isolation in three-dimensional integrated circuits von Margomenos, A., Herrick, K.J., Herman, M.I., Valas, S., Katehi, L.P.B.

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A Comparison of Si CMOS and SiGe BiCMOS Technologies for Automotive Radars von Margomenos, A.

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92-96 GHz GaN power amplifiers von Micovic, M., Kurdoghlian, A., Margomenos, A., Brown, D. F., Shinohara, K., Burnham, S., Milosavljevic, I., Bowen, R., Williams, A.J., Hashimoto, P., Grabar, R., Butler, C., Schmitz, A., Willadsen, P. J., Chow, D. H.

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Isolation in three-dimensional integrated circuits von Margomenos, A., Valas, S., Herman, M.I., Katehi, L.P.B.

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X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management von Margomenos, A., Micovic, M., Kurdoghlian, A., Shinohara, K., Brown, D. F., Butler, C., Bowen, R., Wetzel, M., McGuire, C., Milosavljevic, I., Grabar, R., Chow, D. H.

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Low Loss, Cu damascene interconnects and passives compatible with GaN MMIC von Margomenos, A., Micovic, M., Butler, C., Holden, B. T., Chang, D. T., McGuire, C., Chow, D. H.

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Deeply-Scaled E/D-Mode GaN-HEMTs for Sub-mm-Wave Amplifiers and Mixed-Signal Applications von Shinohara, K., Regan, D., Corrion, A., Brown, D., Alvarado-Rodoriguez, I., Cunningham, M., Butler, C., Schmitz, A., Kim, S., Holden, B., Chang, D., Lee, V., Asbeck, P. M.

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Ultra-wideband three dimensional transitions for on-wafer packages von Margomenos, A., Katehi, L.P.B.

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Novel wideband 3D transitions on Liquid Crystal Polymer for millimeter-wave applications up to 100 GHz von Rida, A., Margomenos, A., Wu, T., Tentzeris, M.M.

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RF MEMS and Si micromachining in high frequency applications von Peroulis, D., Margomenos, A., Katehi, L.P.B.

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Low loss finite width ground plane, thin film microstrip lines on Si wafers von Ponchak, G.E., Margomenos, A., Katehi, P.B.

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Silicon micromachined interconnects for on-wafer packaging of MEMS devices von Margomenos, A., Peroulis, D., Becker, J.P., Katehi, L.P.B.

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High-Q evanescent-mode filters using silicon micromachining and polymer stereolithography (SL) processing von Xun Gong, Margomenos, A., Bosui Liu, Chappell, W.J., Katehi, L.P.B.

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70-105 GHz wideband GaN power amplifiers von Margomenos, A., Kurdoghlian, A., Micovic, M., Shinohara, K., Brown, D. F., Bowen, R., Milosavljevic, I., Grabar, R., Butler, C., Schmitz, A., Willadsen, P. J., Madhav, M., Chow, D. H.

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