Frequency-dependent electrical characteristics of GaAs MESFETs von Golio, J.M., Miller, M.G., Maracas, G.N., Johnson, D.A.

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Reduction of the thermal impedance of vertical-cavity surface-emitting lasers after integration with copper substrates von Mathine, D. L., Nejad, H., Allee, D. R., Droopad, R., Maracas, G. N.

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Microfabrication of two layer structures of electrically isolated wires using self-assembly to guide the deposition of insulating organic polymer von Black, Andrew J, Nealey, Paul F, Thywissen, Joseph H, Deshpande, Mandar, El-Zein, Nada, Maracas, George N, Prentiss, Mara, Whitesides, George M

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An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling von Kola, S., Golio, J.M., Maracas, G.N.

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Temperature-dependent pseudodielectric functions of GaAs determined by spectroscopic ellipsometry von Maracas, G. N., Kuo, C. H., Anand, S., Droopad, R.

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A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio von Gerber, D.S., Droopad, R., Maracas, G.N.

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A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements von Gerber, D.S., Maracas, G.N.

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Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures von Lin, D. Y., Lin, F. C., Huang, Y. S., Qiang, H., Pollak, Fred H., Mathine, D. L., Maracas, G. N.

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Electron mobility enhancement by confining optical phonons in GaAs/AlAs multiple quantum wells von THEODORE ZHU, X, GORONKIN, H, MARACAS, G. N, DROOPAD, R, STROSCIO, M. A

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Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity von Moneger, S., Qiang, H., Pollak, F.H., Mathine, D.L., Droopad, R., Maracas, G.N.

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A temperature-dependent model for the complex dielectric function of GaAs von KAMLET, L. I, TERRY, F. L, MARACAS, G. N

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Selectively oxidized GaAs MESFETs transferred to a Si substrate von Wheeler, C.B., Mathine, D.L., Johnson, S.R., Maracas, G.N., Allee, D.R.

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Real time in-situ thickness control of Fabry—Perot cavities in MBE by 44 and 88 wavelength ellipsometry von Kuo, C.H., Boonzaayer, M.D., DeHerrera, M.F., Schroder, D.K., Maracas, G.N., Johs, B.

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Ex situ ellipsometry characterization of excimer laser annealed amorphous silicon thin films grown by low pressure chemical vapor deposition von Kuo, Chau-Hong, Hsieh, In-Cha, Schroder, Dieter K., Maracas, George N., Chen, Sheau, Sigmon, Thomas W.

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Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/AlxGa1-xAs multiple quantum wells von GERBER, D. S, DROOPAD, R, MARACAS, G. N

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A computational Fourier series solution of the BenDaniel-Duke Hamiltonian for arbitrary shaped quantum wells von Mathine, D.L., Krishnan Myjak, S., Maracas, G.N.

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Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer von Wheeler, C., Daryanani, S., Mathine, D.L., Maracas, G.N., Allee, D.R.

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Transition from longitudinal-optical phonon scattering to surface-optical phonon scattering in polar semiconductor superlattices von Stroscio, Michael A., Iafrate, Gerald J., Kim, K. W., Littlejohn, M. A., Goronkin, Herbert, Maracas, George N.

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Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation von Mathine, D. L., Maracas, G. N., Gerber, D. S., Droopad, R., Graham, R. J., McCartney, M. R.

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Pseudomorphic InGaAs/GaAs and GaAs/AlGaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applications von DROOPAD, R, GERBER, D. S, CHOI, C, MARACAS, G. N

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