Frequency-dependent electrical characteristics of GaAs MESFETs von Golio, J.M., Miller, M.G., Maracas, G.N., Johnson, D.A.

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A GaAs/AlGaAs asymmetric Fabry-Perot reflection modulator with very high contrast ratio von Gerber, D.S., Droopad, R., Maracas, G.N.

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A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements von Gerber, D.S., Maracas, G.N.

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Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures von Lin, D. Y., Lin, F. C., Huang, Y. S., Qiang, H., Pollak, Fred H., Mathine, D. L., Maracas, G. N.

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An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling von Kola, S., Golio, J.M., Maracas, G.N.

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Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/AlxGa1-xAs multiple quantum wells von GERBER, D. S, DROOPAD, R, MARACAS, G. N

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A computational Fourier series solution of the BenDaniel-Duke Hamiltonian for arbitrary shaped quantum wells von Mathine, D.L., Krishnan Myjak, S., Maracas, G.N.

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Temperature-dependent pseudodielectric functions of GaAs determined by spectroscopic ellipsometry von Maracas, G. N., Kuo, C. H., Anand, S., Droopad, R.

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Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity von Moneger, S., Qiang, H., Pollak, F.H., Mathine, D.L., Droopad, R., Maracas, G.N.

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Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well von Chi, W S, Lin, D Y, Huang, Y S, Qiang, H, Pollak, F H, Mathine, D L, Maracas, G N

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Selectively oxidized GaAs MESFETs transferred to a Si substrate von Wheeler, C.B., Mathine, D.L., Johnson, S.R., Maracas, G.N., Allee, D.R.

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Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells von DROOPAD, R, CHOI, K. Y, PUECHNER, R. A, SHIRALAGI, K. T, GERBER, D. S, MARACAS, G. N

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Low resistance Pd/Ge ohmic contacts to epitaxially lifted-off n-type GaAs film von FATHOLLAHNEJAD, H, RAJESH, R, LIU, J, DROOPAD, R, MARACAS, G. N, CARPENTER, R. W

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Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces von DROOPAD, R, PUECHNER, R. A, SHIRALAGI, K. T, CHOI, K. Y, MARACAS, G. N

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Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation von Mathine, D. L., Maracas, G. N., Gerber, D. S., Droopad, R., Graham, R. J., McCartney, M. R.

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Low temperature GaAs grown by gas source molecular beam epitaxy von Droopad, R., Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Maracas, G.N.

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Experimental evaluation of low-frequency oscillations in undoped GaAs to probe deep level parameters von MARACAS, G. N, JOHNSON, D. A, GORONKIN, H

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Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures von Droopad, R., Puechner, R.A., Choi, K.Y., Shiralagi, K.T., Maracas, G.N.

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A comparison of As and P-based semiconductors grown at low temperatures by MBE and GSMBE von Maracas, G. N., Shiralagi, K., Ramamurti, R., Carpenter, R. W.

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Piezoreflectance study of a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure von Lin, F C, Chi, W S, Huang, Y S, Qiang, H, Pollak, F H, Mathine, D L, Maracas, G N

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