Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors von Okita, Hideyuki, Hikita, Masahiro, Nishio, Akihiko, Sato, Takahiro, Matsunaga, Keiichi, Matsuo, Hisayoshi, Tsuda, Michinobu, Mannoh, Masaya, Kaneko, Saichiro, Kuroda, Masayuki, Yanagihara, Manabu, Ikoshi, Ayanori, Morita, Tatsuo, Tanaka, Kenichiro, Uemoto, Yasuhiro

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Reduction of aspect ratio in 650 nm-band self-sustained-pulsing lasers with saturable-absorbing layer von ADACHI, H, KIDOGUCHI, I, FUKUHISA, T, TANAKA, K, MANNOH, M, TAKAMORI, A

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Strain effect on 630 nm GaInP/AlGaInP multi-quantum well lasers von KAMIYAMA, S, UENOYAMA, T, MANNOH, M, OHNAKA, K

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Comparison of alternate P-sources to phosphine in the metalorganic vapor phase epitaxy growth of p-AlGaInP von Mannoh, Masaya, Ishibashi, Akihiko, Ohnaka, Kiyoshi

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High-Power 650-nm-Band AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl 2 /N 2 Mixture von Kidoguchi, Isao, Adachi, Hideto, Tanaka, Kiyotake, Fukuhisa, Toshiya, Masaya Mannoh, Masaya Mannoh, Akira Takamori, Akira Takamori

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Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy von Ishibashi, Akihiko, Takeishi, Hidemi, Mannoh, Masaya, Yabuuchi, Yasufumi, Ban, Yuzaburoh

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Raman study of crystalline structure and resonant behavior in (Al x Ga1− x )0.5In0.5P quaternary alloys von Kubo, Minoru, Mannoh, Masaya, Narusawa, Tadashi

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High-power 650-nm-band AlGaInP visible laser diodes fabricated by reactive ion beam etching using Cl2/N2 mixture von KIDOGUCHI, I, ADACHI, H, TANAKA, K, FUKUHISA, T, MANNOH, M, TAKAMORI, A

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Raman scattering in (AlxGa1-x)0.51In0.49P quaternary alloys von KUBO, M, MANNOH, M, TAKAHASHI, Y, OGURA, M

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Dry-etched-cavity pair-groove-substrate GaAs/AlGaAs multiquantum well lasers von YUASA, T, MANNOH, M, ASAKAWA, K, SHINOZAKI, K, ISHII, M

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Characteristics of molecular-beam epitaxially grown pair-groove-substrate GaAs/AlGaAs multiquantum-well lasers von YUASA, T, MANNOH, M, YAMADA, T, NARITSUKA, S, SHINOZAKI, K, ISHII, M

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Topical Papers on Applications of Lasers to Memory. 650nm-Band Red Diode Lasers for DVDs von ADACHI, Hideto, MANNOH, Masaya, TAKAMORI, Akira

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Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy von MANNOH, M, YUASA, T, NARITSUKA, S, SHINOZAKI, K, ISHII, M

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Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure von Imafuji, O., Fukuhisa, T., Yuri, M., Mannoh, M., Yoshikawa, A., Itoh, K.

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Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy von Mihara, Minoru, Mannoh, Masaya, Shinozaki, Keisuke, Naritsuka, Shigeya, Ishii, Makoto

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Stable operation of self-sustained pulsation in 650-nm-band AlGaInP visible lasers with highly doped saturable absorbing layer von Kidoguchi, Isao, Adachi, Hideto, Fukuhisa, Toshiya, Mannoh, Masaya, Takamori, Akira

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Semiconductor laser device von MANNOH MASAYA, UKAI TSUTOMU

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Semiconductor laser device von Ukai, Tsutomu, Mannoh, Masaya

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Low-noise 650-nm-band AlGaInP visible laser diodes with a highly doped saturable absorbing layer von Kidoguchi, I., Adachi, H., Kamiyama, S., Fukuhisa, T., Mannoh, M., Takamori, A.

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Theoretical studies of GaInP-AlGaInP strained quantum-well lasers including spin-orbit split-off band effect von Kamiyama, S., Uenoyama, T., Mannoh, M., Ohnaka, K.

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