Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure von Imafuji, O., Fukuhisa, T., Yuri, M., Mannoh, M., Yoshikawa, A., Itoh, K.

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Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE von Fukuhisa, T, Imafuji, O, Mannoh, M, Yuri, M, Itoh, K

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Theoretical studies of GaInP-AlGaInP strained quantum-well lasers including spin-orbit split-off band effect von Kamiyama, S., Uenoyama, T., Mannoh, M., Ohnaka, K.

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High power and high-temperature operation of GaInP/AlGaInP strained multiple quantum well lasers von Mannoh, M., Hoshina, J., Kamiyama, S., Ohta, H., Ban, Y., Ohnaka, K.

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Low-noise 650-nm-band AlGaInP visible laser diodes with a highly doped saturable absorbing layer von Kidoguchi, I., Adachi, H., Kamiyama, S., Fukuhisa, T., Mannoh, M., Takamori, A.

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Analysis of GaInP/AlGaInP compressive strained multiple-quantum-well laser von Kamiyama, S., Uenoyama, T., Mannoh, M., Ban, Y., Ohnaka, K.

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Theoretical analysis of valence subband structures and optical gain of GaInP/AlGaInP compressive strained-quantum wells von Kamiyama, S., Uenoyama, T., Mannoh, M., Ban, Y., Ohnaka, K.

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Effect of spin-orbit split-off bands on GaInP/AlGaInP strained quantum well lasers von Kamiyama, S., Uenoyama, T., Mannoh, M., Ohnaka, K.

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High power single mode operation of AlGaInP visible laser diode with lateral leaky waveguide structure von Kidoguchi, I., Karniyama, S., Adachi, H., Mannoh, M., Ban, Y., Ohnaka, K.

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Dry-etched-cavity pair-groove-substrate GaAs/AlGaAs multiquantum well lasers von YUASA, T, MANNOH, M, ASAKAWA, K, SHINOZAKI, K, ISHII, M

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Ionized Mg doping in molecular-beam epitaxy of GaAs von MANNOH, M, NOMURA, Y, SHINOZAKI, K, MIHARA, M, ISHII, M

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Characteristics of molecular-beam epitaxially grown pair-groove-substrate GaAs/AlGaAs multiquantum-well lasers von YUASA, T, MANNOH, M, YAMADA, T, NARITSUKA, S, SHINOZAKI, K, ISHII, M

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Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy von MANNOH, M, YUASA, T, NARITSUKA, S, SHINOZAKI, K, ISHII, M

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Effects of thermal annealing on Si-doped GaAs grown by molecular beam epitaxy von SHINOZAKI, K, MANNOH, M, NOMURA, Y, MIHARA, M, ISHII, M

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A new index-guided AlGaInP visible semiconductor laser with very small astigmatism von Takahashi, Y., Mannoh, M., Hoshina, J., Kamiyama, S., Sasai, Y., Ohnaka, K., Ogura, M.

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Stable operation of self-sustained pulsation in 650-nm-band AlGaInP visible lasers with highly doped saturable absorbing layer von Kidoguchi, Isao, Adachi, Hideto, Fukuhisa, Toshiya, Mannoh, Masaya, Takamori, Akira

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IVA-5 low-threshold MBE GaAs-AlGaAs quantum well lasers with dry-etched mirrors von Mannoh, M., Yuasa, T., Asakawa, K., Naritsuka, S., Shinozaki, K., Ishii, M.

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Effect of Group V/III Flux Ratio on Lightly Si‐Doped Al x Ga1 − x As Grown by Molecular Beam Epitaxy von Nomura, Y., Mannoh, M., Mihara, M., Naritsuka, S., Yamanaka, K., Yuasa, T., Ishii, M.

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Comparison of alternate P-sources to phosphine in the metalorganic vapor phase epitaxy growth of p-AlGaInP von Mannoh, Masaya, Ishibashi, Akihiko, Ohnaka, Kiyoshi

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Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure von KIDOGUCHI, I, KAMIYAMA, S, MANNOH, M, BAN, Y, OHNAKA, K

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