Comparative study of two atomic layer etching processes for GaN von Mannequin, Cédric, Vallée, Christophe, Akimoto, Katsuhiro, Chevolleau, Thierry, Durand, Christophe, Dussarrat, Christian, Teramoto, Takashi, Gheeraert, Etienne, Mariette, Henri

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Mechanism for Conducting Filament Growth in Self-Assembled Polymer Thin Films for Redox-Based Atomic Switches von Krishnan, Karthik, Tsuruoka, Tohru, Mannequin, Cedric, Aono, Masakazu

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Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy von Okumura, Hironori, Fassion, Andréa, Mannequin, Cédric

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Si-doped (AlGa) 2 O 3 growth on a-, m- and r-plane α-Al 2 O 3 substrates by molecular beam epitaxy von Okumura, Hironori, Fassion, Andréa, Mannequin, Cédric

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From MEMRISTOR to MEMImpedance device von Wakrim, T., Vallée, C., Gonon, P., Mannequin, C., Sylvestre, A.

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(Invited) Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories von Bsiesy, Ahmad, Gonon, Patrice, Vallée, Christophe, Pointet, John, Mannequin, Cédric

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Atomic and Molecular Layer Deposition Area Selective Deposition using alternate deposition and etch super-cycle strategies von Bonvalot, Marceline, Vallee, Christophe, Mannequin, Cedric, Jaffal, Moustapha, Gassilloud, Remy, Posseme, Nicolas, Chevolleau, Thierry

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Photo-induced conductivity transient in n-type beta-(Al0.16Ga0.84)(2)O-3 and beta-Ga2O3 von Traore, Aboulaye, Gouveia, Maria, Okumura, Hironori, Mannequin, Cedric, Fassion, Andrea, Sakurai, Takeaki

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Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3 von Traoré, Aboulaye, Gouveia, Maria, Okumura, Hironori, Mannequin, Cedric, Fassion, Andrea, Sakurai, Takeaki

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Photo-induced conductivity transient in n-type β-(Al 0.16 Ga 0.84 ) 2 O 3 and β-Ga 2 O 3 von Traoré, Aboulaye, Gouveia, Maria, Okumura, Hironori, Mannequin, Cedric, Fassion, Andrea, Sakurai, Takeaki

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Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior von Mannequin, Cedric, Tsuruoka, Tohru, Hasegawa, Tsuyoshi, Aono, Masakazu

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Humidity effects on the redox reactions and ionic transport in a Cu/Ta 2 O 5 /Pt atomic switch structure von Tsuruoka, Tohru, Valov, Ilia, Mannequin, Cedric, Hasegawa, Tsuyoshi, Waser, Rainer, Aono, Masakazu

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Investigation of fluorine-based plasma for Atomic Layer Etching of GaN von Mannequin, Cedric, Nakazawa, Kisho, Vallee, Christophe, Gheeraert, Etienne, Mariette, Henri, Akimoto, Katsuhiro, Sasaki, Masahiro, Dussarat, Christian

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BCl3-based plasma etching of (010) β-Ga2O3 substrates von DOUEST, Yohan, MANNEQUIN, Cedric, ITO, Toshimitsu, VALLEE, Christophe, GHEERAERT, Etienne, SASAKI, Masahiro

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A fully passive RF switch based on nanometric conductive bridge von Vena, Arnaud, Perret, Etienne, Tedjini, Smail, Vallee, Christophe, Gonon, Patrice, Mannequin, Cedric

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Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 conductive-bridging-RAMs and HfO2 Oxide-RAMs von Gonon, P, Vallee, C, Jousseaume, V, Bernard, Y, Mannequin, C, Mougenot, M, Grampeix, H

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