Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions von Mannen, Yuina, Shimada, Kana, Asada, Kanta, Ohtani, Noboru

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Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals von Mannen, Yuina, Shimada, Kana, Taniguchi, Chisato, Ohtani, Noboru

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Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals von Shioura, Kentaro, Okawa, Kiyo, Sato, Shinya, Katsuno, Masakazu, Ohtani, Noboru, Tsuge, Hiroshi, Fujimoto, Tatsuo, Mannen, Yuina

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