Research on the application effect of inter-professional training program for newly enrolled medical staff in operating room based on digital information technology von Zhang, Manhong, Wang, Wenjun

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An insulated-gate bipolar transistor model based on the finite-volume charge method von Zhang, Manhong, Wu, Wanchen

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Enhancing neurosurgical navigation operation flow management through personal digital assistant technology: a prospective cohort study von Quan, YaQin, Zhang, ManHong, Ji, HongMing, Cheng, Rui

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A modified finite difference model to the reverse recovery of silicon PIN diodes von Zhang, Manhong

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Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device von Liu, Qi, Dou, Chunmeng, Wang, Yan, Long, Shibing, Wang, Wei, Liu, Ming, Zhang, Manhong, Chen, Junning

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Examination of the application of multiphonon models to the random telegraph signal noise in metal-oxide-semiconductor structures von Zhang, Manhong, Liu, Ming

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Unification of three multiphonon trap-assisted tunneling mechanisms von Zhang, Manhong, Huo, Zongliang, Yu, Zhaoan, Liu, Jing, Liu, Ming

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Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices von Zhang, Manhong, Zhai, Yi

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Low-Power and Highly Uniform Switching in ZrO2-Based ReRAM With a Cu Nanocrystal Insertion Layer von QI LIU, SHIBING LONG, WEI WANG, TANACHUTIWAT, Sansiri, YINGTAO LI, QIN WANG, MANHONG ZHANG, ZONGLIANG HUO, JUNNING CHEN, MING LIU

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A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application von Liu, Jing, Wang, Qin, Long, Shibing, Zhang, Manhong, Liu, Ming

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Effect of Damage in Source and Drain on the Endurance of a 65-nm-Node NOR Flash Memory von Sun, Zhong, Zhang, Manhong, Huo, Zongliang, Li, Shaobin, Yang, Yun, Qiu, Shengfen, Wu, Hanming, Liu, Ming

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Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices von Jiang, Dandan, Zhang, Manhong, Huo, Zongliang, Sun, Zhong, Wang, Yong, Zhang, Bo, Chen, Junning, Liu, Ming

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Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer von OK, Injo, KIM, Hyoung-Sub, LEE, Jack C, MANHONG ZHANG, KANG, Chang-Yong, SE JONG RHEE, CHOI, Changhwan, KRISHNAN, Siddarth A, LEE, Tackhwi, FENG ZHU, THAREJA, Gaurav

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Prominently optimized thermoelectric performance via possibly magnified carrier energy filtering effect in sandwich-structured p-type Cu-doped Bi0.5Sb1.5Te3 films von Liang, Shaojun, Zhang, Manhong, Zhu, Hanming, Yue, Song

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Giant Band Convergence and High Thermoelectric Performance in n ‐Type PbSe Induced by Spin‐Orbit Coupling von Cai, Jianfeng, Wang, Ruoyu, Zhuang, Shuai, Gao, Feng, Zhang, Manhong, Zhang, Zongwei, Tan, Xiaojian, Liu, Guoqiang, Jiang, Jun

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Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures von Li, Yingtao, Long, Shibing, Liu, Qi, Wang, Qin, Zhang, Manhong, Lv, Hangbing, Shao, Lubing, Wang, Yan, Zhang, Sen, Zuo, Qingyun, Liu, Su, Liu, Ming

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Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer von Zheng, Zhiwei, Huo, Zongliang, Zhang, Manhong, Zhu, Chenxin, Liu, Jing, Liu, Ming

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Effect of high temperature annealing on the performance of MANOS charge trapping memory von Jin, Lin, Zhang, ManHong, Huo, ZongLiang, Yu, ZhaoAn, Jiang, DanDan, Wang, Yong, Bai, Jie, Chen, JunNing, Liu, Ming

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Optimization of silicon nanocrystals growth process by low pressure chemical vapor deposition for non-volatile memory application von Wang, Yong, Yang, Xiaonan, Wang, Qin, Long, Shibing, Zhang, Manhong, Huo, Zongliang, Zhang, Bo, Liu, Ming

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Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement von Yang, XiaoNan, Zhang, ManHong, Wang, Yong, Huo, ZongLiang, Long, ShiBing, Zhang, Bo, Liu, Jing, Liu, Ming

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