A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs von Lin, J., Zhao, X., Clavero, I. Manglano, Antoniadis, D. A., del Alamo, J. A.

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Incubation effect during laser micromachining of GaN films with femtosecond pulses von Almeida, G. F. B., Nolasco, L. K., Barbosa, G. R., Schneider, A., Jaros, A., Manglano Clavero, I., Margenfeld, C., Waag, A., Voss, T., Mendonça, C. R.

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Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption von Martins, R. J., Siqueira, J. P., Manglano Clavero, I., Margenfeld, C., Fündling, S., Vogt, A., Waag, A., Voss, T., Mendonca, C. R.

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Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping von Vivas, M.G., Manoel, D.S., Dipold, J., Martins, R.J., Fonseca, R.D., Manglano-Clavero, I., Margenfeld, C., Waag, A., Voss, T., Mendonca, C.R.

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Reshaping of 3D GaN Structures during Annealing: Phenomenological Description and Mathematical Model von Manglano Clavero, Irene, Margenfeld, Christoph, Hartmann, Jana, Waag, Andreas

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Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures von Manglano Clavero, Irene, Margenfeld, Christoph, Hartmann, Jana, Waag, Andreas

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Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures von Krieg, Linus, Meierhofer, Florian, Gorny, Sascha, Leis, Stefan, Splith, Daniel, Zhang, Zhipeng, von Wenckstern, Holger, Grundmann, Marius, Wang, Xiaoxue, Hartmann, Jana, Margenfeld, Christoph, Manglano Clavero, Irene, Avramescu, Adrian, Schimpke, Tilman, Scholz, Dominik, Lugauer, Hans-Jürgen, Strassburg, Martin, Jungclaus, Jörgen, Bornemann, Steffen, Spende, Hendrik, Waag, Andreas, Gleason, Karen K., Voss, Tobias

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Gradients in Three-Dimensional Core–Shell GaN/InGaN Structures: Optimization and Physical Limitations von Manglano Clavero, Irene, Margenfeld, Christoph, Quatuor, Jonas, Spende, Hendrik, Peters, Lukas, Schwarz, Ulrich T., Waag, Andreas

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3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices von Hartmann, Jana, Manglano Clavero, Irene, Nicolai, Lars, Margenfeld, Christoph, Spende, Hendrik, Ledig, Johannes, Zhou, Hao, Steib, Frederik, Jaros, Angelina, Avramescu, Adrian, Strassburg, Martin, Trampert, Achim, Wehmann, Hergo‐Heinrich, Lugauer, Hans‐Jürgen, Voss, Tobias, Waag, Andreas

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Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer range von Spende, Hendrik, Margenfeld, Christoph, Meyer, Tobias, Clavero, Irene Manglano, Bremers, Heiko, Hangleiter, Andreas, Seibt, Michael, Waag, Andreas, Bakin, Andrey

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Transferable Substrateless GaN LED Chips Produced by Femtosecond Laser Lift-Off for Flexible Sensor Applications von Nursidik Yulianto, Steffen Bornemann, Lars Daul, Christoph Margenfeld, Irene Manglano Clavero, Nurhalis Majid, Ludger Koenders, Winfried Daum, Andreas Waag, Hutomo Suryo Wasisto

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Vertical 3D GaN Nanoarchitectures towards an Integrated Optoelectronic Biosensing Platform in Microbial Fuel Cells von Heidi Boht, Hilke Wichmann, Gregor Scholz, Feng Yu, Klaas Strempel, Shinta Mariana, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Joan Daniel Prades, Uwe Schröder, Hutomo Suryo Wasisto, Andreas Waag

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Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography von Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto

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Plasma Profiling Time-of-Flight Mass Spectrometry for Fast Elemental Analysis of Semiconductor Structures with Depth Resolution in the Nanometer Range von Spende, Hendrik, Margenfeld, Christoph, Meyer, Tobias, Irene Manglano Clavero, Bremers, Heiko, Hangleiter, Andreas, Seibt, Michael, Waag, Andreas, Bakin, Andrey

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