Negative luminescence in semiconductors: a retrospective view von Malyutenko, V.K.

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Optimization of parameters for silicon planar source of modulated infrared radiation von Piotrowski, T., Malyutenko, V.K., Węgrzecki, M., Czerwinski, A., Polakowski, H., Tykhonov, A.M.

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Two-dimensional InSb array of IR emitters with alternating contrast von Malyutenko, V.K, Bolgov, S.S, Malyutenko, O.Yu

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Un-cooled infrared (8–12 μm) emitters of positive and negative contrast von Malyutenko, V.K., Bolgov, S.S., Malyutenko, O.Yu

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Characterization of oxygen impurity concentration in silicon based on thermal emission measurements von Malyutenko, V.K., Chernyakovsky, V.I., Piotrowski, T.

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CO 2-laser with vibration-proof Q-switch von Berezhinsky, L.I., Liptuga, A.I., Malyutenko, V.K.

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Thermal-emitting diodes for IR von Malyutenko, V.K., Liptuga, A.I.

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N-type negative differential conductivity at magnetoconcentration effect, resulting from auger generation of carriers in narrow-gap semiconductors von Akopyan, A.A., Bolgov, S.S., Malyutenko, V.K., Savchenko, A.P.

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Thermal emission of semiconductors: Investigation and application von Malyutenko, V.K.

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CO2-laser with vibration-proof Q-switch von BEREZHINSKY, L. I, LIPTUGA, A. I, MALYUTENKO, V. K

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Galvanomagnetic infrared-luminescence of varying-gap Cd xHg 1−xTe/CdTe structures von Bolgov, S.S., Malyutenko, V.K., Pipa, V.I., Savchenko, A.P.

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CONTACT-FREE METHOD OF DETERMINING EFFECTIVE LIFETIME OF UNBALANCED CHARGE CARRIERS IN SEMICONDUCTOR von MALYUTENKO V.K.,SU, TESLENKO G.I.,SU

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Influence of plasma oscillations on thermal emission spectrum of doped semiconductors von Malyutenko, V.K., Morozhenko, V.A., Chernyakhovsky, V.I.

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Towards higher sensitivity of magnetic transducers based on carrier magnetoconcentration von Cristoloveanu, S., Chovet, A., Malyutenko, V.K.

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Infrared emission of free carriers in semiconductors below the fundamental absorption edge von Malyutenko, V.K., Botte, V.A., Chernyakhovsky, V.I.

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GALVANOMAGNETIC INFRARED-LUMINESCENCE OF VARYING-GAP CDXHG1-XTE/CDTE STRUCTURES von BOLGOV, SS, MALYUTENKO, VK, PIPA, SAVCHENKO, AP

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Photoconductors under transverse sweep-out conditions von Malyutenko, V.K., Teslenko, G.I.

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A new type of IR luminescence von Malyutenko, V.K., Bolgov, S.S., Yablonovsky, E.I.

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Thermal emission of semiconductors under nonequilibrium conditions von Malyutenko, V.K., Liptuga, A.I., Teslenko, G.I., Botte, V.A.

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The propagation of infrared-radiation through an intrinsic semiconductor in the crossed electrical and magnetic fields von Boiko, I.I., Malyutenko, V.K., Liptuga, A.I.

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