Silicon coding-decoding photonic device by electron irradiation and light down conversion von Malyutenko, V. K., Tykhonov, A. N., Malyutenko, O. Yu, Rohutskii, I. S., Danilchenko, B. A.

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Current crowding impact at spatially and temporarily resolved thermal characters of large-area AlGaInP light emitting diodes operating in dimming/flashing modes von Malyutenko, V. K., Podoltsev, A. D., Malyutenko, O. Yu

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Radiative cooling of bulk silicon by incoherent light pump von Malyutenko, V. K., Bogatyrenko, V. V., Malyutenko, O. Yu

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Bandgap dependence of current crowding effect in 3-5 μm InAsSb/InAs planar light emitting devices von MALYUTENKO, V. K, ZINOVCHUK, A. V, YU MALYUTENKO, O

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Radiative cooling by light down conversion of InGaN light emitting diode bonded to a Si wafer von Malyutenko, V. K., Bogatyrenko, V. V., Malyutenko, O. Yu

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Bulk silicon as photonic dynamic infrared scene projector von Malyutenko, V. K., Bogatyrenko, V. V., Malyutenko, O. Yu

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Radiative cooling of bulk Si by optical down-conversion von Malyutenko, V. K., Bogatyrenko, V. V., Malyutenko, O. Yu

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Negative contrast IR emitting device based on the carrier contact exclusion von Malyutenko, V K, Vainberg, V V, Teslenko, G I, Malyutenko, O Yu, Pultorak, J

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The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes von Zinovchuk, A. V., Malyutenko, O. Yu, Malyutenko, V. K., Podoltsev, A. D., Vilisov, A. A.

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Room-temperature InAsSbP∕InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection von Malyutenko, V. K., Malyutenko, O. Yu, Zinovchuk, A. V.

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The transient exclusion effect in intrinsic semiconductors von Malyutenko, V K, Vainberg, V V, Teslenko, G I, Malyutenko, O Yu, Pultorak, J

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Above-room-temperature 3 - 12 μ m Si emitting arrays von Malyutenko, V. K., Bolgov, S. S., Malyutenko, O. Yu

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Micromachined single-level nonplanar polycrystalline SiGe thermal microemitters for infrared dynamic scene projection von Malyutenko, V. K., Malyutenko, O. Yu, Leonov, V., Van Hoof, C.

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Planar silicon light emitting arrays for the 3 - 12   μ m spectral band von Malyutenko, V. K., Malyutenko, O. Yu, Bogatyrenko, V. V., Tykhonov, A. M., Piotrowski, Tadeusz, Grodecki, Remigiusz, Pultorak, Jerzy, Wegrzecki, Maciej

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Bandgap dependence of current crowding effect in 3–5 µm InAsSb/InAs planar light emitting devices von Malyutenko, V K, Zinovchuk, A V, Malyutenko, O Yu

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Room-temperature In As Sb P ∕ In As light emitting diodes by liquid phase epitaxy for midinfrared ( 3 - 5 μ m ) dynamic scene projection von Malyutenko, V. K., Malyutenko, O. Yu, Zinovchuk, A. V.

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Current crowding in InAsSb light-emitting diodes von Malyutenko, V. K., Malyutenko, O. Yu, Podoltsev, A. D., Kucheryavaya, I. N., Matveev, B. A., Remennyi, M. A., Stus’, N. M.

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Heat transfer mapping in 3–5 μm planar light emitting structures von Malyutenko, V. K., Malyutenko, O. Yu, Dazzi, A., Gross, N., Ortega, J.-M.

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Two-dimensional InSb array of IR emitters with alternating contrast von Malyutenko, V.K, Bolgov, S.S, Malyutenko, O.Yu

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Un-cooled infrared (8–12 μm) emitters of positive and negative contrast von Malyutenko, V.K., Bolgov, S.S., Malyutenko, O.Yu

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