Raman and TEM characterization of high fluence C implanted nanometric Si on insulator von dos Reis, R.M.S., Maltez, R.L., Moreira, E.C., Dias, Y.P., Boudinov, H.

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Photoluminescence from SiNxOy films deposited by reactive sputtering von Sombrio, G, Franzen, P L, Maltez, R L, Matos, L G, Pereira, M B, Boudinov, H

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Carbon redistribution in nanometric Si1−xCx layers upon ion beam synthesis of SiC by C implantation into SIMOX(1 1 1) von dos Reis, R M S, Maltez, R L, Boudinov, H

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Propagation of misfit dislocations from AlN/Si interface into Si von Liliental-Weber, Z., Maltez, R.L., Xie, J., Morkoç, H.

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Direct Li + incorporation during the anodic formation of compact TiO 2 layers von Peñafiel-Castro, J A, Hahn, B, Maltez, R L, Knörnschild, G, Allongue, P, Dick, L F P

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Direct Li+ incorporation during the anodic formation of compact TiO2 layers von Peñafiel-Castro, J A, Hahn, B, Maltez, R L, Knörnschild, G, Allongue, P, Dick, L F P

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Evidence of C migration in the SiO2 to the SiO2/Si interface of C-implanted structures von Ribas, E., Maltez, R.L.

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Ne–He bubble formation in co-implanted Si(111) substrates von Matos, L.G., dos Reis, R.M.S., Maltez, R.L.

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Ion beam synthesis of SiC on Si toward the radiation damage free limit von Ribas, E., Boudinov, H., Maltez, R.L.

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Ion beam synthesis of SiC by C implantation into SIMOX(111) von dos Reis, R.M.S., Maltez, R.L., Boudinov, H.

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PL characterization of GaN nanolayer obtained by N ion implantation into Si3N4/GaAs von Coelho-Júnior, H., Maltez, R.L.

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RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs von Coelho-Júnior, H., Maltez, R.L.

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Synthesis of a GaN nanolayer on (001) GaAs by N ion implantation von Coelho-Júnior, H., dos Santos, J.H.R., Maltez, R.L.

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Direct Li+ incorporation during the anodic formation of compact TiO2 layersElectronic supplementary information (ESI) available. See DOI: 10.1039/c8cc00829a von Peñafiel-Castro, J. A, Hahn, B, Maltez, R. L, Knörnschild, G, Allongue, P, Dick, L. F. P

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Optical and structural properties of InAsP ternary self-assembled quantum dots embedded in GaAs von Ribeiro, E., Maltez, R. L., Carvalho, W., Ugarte, D., Medeiros-Ribeiro, G.

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Controlling alloy composition of InAsP self-assembled quantum dots embedded in GaAs von Maltez, R. L., Ribeiro, E., Carvalho, W., Ugarte, D., Medeiros-Ribeiro, G.

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Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates von Ribeiro, E., Bernussi, A. A., Maltez, R. L., Carvalho, W., Gobbi, A. L., Ugarte, D.

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Photoluminescence from SiN x O y films deposited by reactive sputtering von Sombrio, G, Franzen, P L, Maltez, R L, Matos, L G, Pereira, M B, Boudinov, H

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Carbon redistribution in nanometric Si 1−x C x layers upon ion beam synthesis of SiC by C implantation into SIMOX(1 1 1) von dos Reis, R M S, Maltez, R L, Boudinov, H

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Economical impact of orchiectomy for advanced prostate cancer von De Paula, Adriano A P, Piccelli, Hilton R S, Pinto, Nilson P, Teles, Antonio G, Franqueiro, Antonio G, Maltez, Adriano R L, Silva, Jose H

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