GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow von Maidebura, Y. E., Malin, T. V., Zhuravlev, K. S.

Volltext

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers von Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Ya, Kazancev, D. Yu, Zhuravlev, K. S.

Volltext

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE von Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Zhuravlev, K. S.

Volltext

Luminescence and superradiance in electron-beam-excited AlxGa1−xN von Bokhan, P A, Gugin, P P, Zakrevsky, Dm E, Malin, T V, Solomonov, V I, Spirina, A V

Volltext

Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers von Osinnykh, I V, Malin, T V, Plyusnin, V F, Zhuravlev, K S, Ber, B Ya, Kazantsev, D Yu

Volltext

Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow von Maidebura, Y. E., Malin, T. V., Zhuravlev, K. S.

Volltext

Characterization of MBE-grown AlGaN layers heavily doped using silane von Zhuravlev, K. S., Osinnykh, I. V., Protasov, D. Yu, Malin, T. V., Davydov, V. Yu, Smirnov, A. N., Kyutt, R. N., Spirina, A. V., Solomonov, V. I.

Volltext

Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1) von Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Fateev, N. V.

Volltext

Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE von Milakhin, D S, Malin, T V, Mansurov, V G, Galitsyn, Yu G, Zhuravlev, K S

Volltext

Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5 von Osinnykh, I V, Malin, T V, Zhuravlev, K S

Volltext

Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures von Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V., Fateev, N. V.

Volltext

Moving photoluminescence band in AlGaN GaN heterostructures von Osinnykh, I V, Malin, T V, Zhuravlev, K S

Volltext

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films von Novikova, N. N., Yakovlev, V. A., Klimin, S. A., Malin, T. V., Gilinsky, A. M., Zhuravlev, K. S.

Volltext

Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN:Si layers von Osinnykh, I V, Malin, T V, Plyusnin, V F, Zhuravlev, K S

Volltext

Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface von Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Yu. G., Kozhukhov, A. S., Aleksandrov, I. A., Rzheutski, N. V., Lebiadok, E. V., Razumets, E. A., Zhuravlev, K. S.

Volltext

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers von Malin, T. V., Milakhin, D. S., Mansurov, V. G., Galitsyn, Yu. G., Kozhuhov, A. S., Ratnikov, V. V., Smirnov, A. N., Davydov, V. Yu, Zhuravlev, K. S.

Volltext

Formation of a Graphene-Like SiN Layer on the Surface Si(111) von Mansurov, V. G., Galitsyn, Yu. G., Malin, T. V., Teys, S. A., Fedosenko, E. V., Kozhukhov, A. S., Zhuravlev, K. S., Cora, Ildikó, Pécz, Béla

Volltext

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors von Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Egorkin, V. I., Zaitsev, A. A., Protasov, D. Yu, Kozhukhov, A. S., Ber, B. Ya, Kazantsev, D. Yu, Mansurov, V. G., Zhuravlev, K. S.

Volltext

Nitridation effect on sapphire surface polaritons von Novikova, N.N., Vinogradov, E.A., Yakovlev, V.A., Malin, T.V., Mansurov, V.G., Zhuravlev, K.S.

Volltext

Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy von Zhuravlev, K S, Gulyaev, D V, Aleksandrov, I A, Malin, T V, Mansurov, V G, Galitsyn, Yu G, Konfederatova, K.A., Chen, Yen-Chun, Chang, Wen-Hao

Volltext