A New Integration Method for an Electric Vehicle Wireless Charging System Using LCC Compensation Topology: Analysis and Design von Tianze Kan, Trong-Duy Nguyen, White, Jeff C., Malhan, Rajesh K., Mi, Chunting Chris

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Predicting Risky Driving in a Connected Vehicle Environment von Zhang, Ethan, Masoud, Neda, Bandegi, Mahdi, Malhan, Rajesh K.

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Step Attention: Sequential Pedestrian Trajectory Prediction von Zhang, Ethan, Masoud, Neda, Bandegi, Mahdi, Lull, Joseph, Malhan, Rajesh K.

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Design, process, and performance of all-epitaxial normally-off SiC JFETs von Malhan, Rajesh K., Bakowski, Mietek, Takeuchi, Yuuichi, Sugiyama, Naohiro, Schöner, Adolf

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Fabrication of a SiC Double Gate Vertical Channel JFET and It's Application in Power Electronics von Schöner, Adolf, Bakowski, Mietek, Kumar Malhan, Rajesh, Takeuchi, Yuuichi, Sugiyama, Naohiro, Rabkowski, Jacek, Peftitsis, Dimosthenis, Ranstad, Per, Nee, Hans-Peter

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In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC von Takeuchi, Yuuichi, Schöner, Adolf, Sugiyama, Naohiro, Malhan, Rajesh Kumar

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Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region von Takeuchi, Yuuichi, Schöner, Adolf, Sugiyama, Naohiro, Malhan, Rajesh Kumar, Kataoka, Mitsuhiro

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SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology von Takeuchi, Yuuichi, Malhan, Rajesh Kumar, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Kataoka, Mitsuhiro

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Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET von Takeuchi, Yuuichi, Sugiyama, Naohiro, Malhan, Rajesh Kumar, Rashid, S.J., Amaratunga, G.A.J., Reimann, T., Udrea, F., Kataoka, Mitsuhiro

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Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition von Chen, Yi, Kimoto, Tsunenobu, Takeuchi, Yuichi, Malhan, Rajesh Kumar, Matsunami, Hiroyuki

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Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask von Chen, Yi, Kimoto, Tsunenobu, Takeuchi, Yuichi, Malhan, Rajesh K., Matsunami, Hiroyuki

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Effect of C and B sequential implantation on the B acceptors in 4H–SiC von Nakano, Yoshitaka, Malhan, Rajesh Kumar, Kachi, Tetsu, Tadano, Hiroshi

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Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices von Hara, Kazukuni, Nakamura, Hiroki, Nakamura, Daisuke, Malhan, Rajesh Kumar, Onda, Shoichi

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Effect of C/B sequential implantation on the B acceptors in 4H–SiC von Nakano, Yoshitaka, Kachi, Tetsu, Tadano, Hiroshi, Kumar Malhan, Rajesh

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METHOD FOR UN-SIGNALIZED INTERSECTION TRAFFIC FLOW MANAGEMENT von MALHAN, Rajesh, LULL, Joseph

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Intersection infrastructure warning system von Malhan, Rajesh Kumar, Bhatia, Tishya, Lull, Joseph

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DIMENSION ESTIMATING SYSTEM AND METHOD FOR ESTIMATING DIMENSION OF TARGET VEHICLE von RAWASHDEH, Zaydoun, MALHAN, Rajesh

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System for predicting aggressive driving von Zhang, Ethan, Malhan, Rajesh Kumar, Zhang, Wei, Masoud, Neda

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SYSTEMS AND METHODS FOR ESTIMATING A TRAFFIC PATTERN FROM SPARSE DATA von Bandegi, Mahdi, Bodun, Patrick, Crowley, Oscar, Malhan, Rajesh

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TRAFFIC VOLUME ESTIMATION USING APPROACHING VEHICLE DATA von CROWLEY, Oscar, MALHAN, Rajesh, BODUN, Patrick, BANDEGI, Mahdi

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