Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy von Malguth, E., Hoffmann, A., Phillips, M. R.

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Doping-level-dependent optical properties of GaN:Mn von Gelhausen, O., Malguth, E., Phillips, M. R., Goldys, E. M., Strassburg, M., Hoffmann, A., Graf, T., Gjukic, M., Stutzmann, M.

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Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals von Rauch, C., Gehlhoff, W., Wagner, M. R., Malguth, E., Callsen, G., Kirste, R., Salameh, B., Hoffmann, A., Polarz, S., Aksu, Y., Driess, M.

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Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices von Kane, M. H., Strassburg, M., Fenwick, W. E., Asghar, A., Senawiratne, J., Azamat, D., Hu, Z., Malguth, E., Graham, S., Perera, U., Gehlhoff, W., Hoffmann, A., Dietz, N., Summers, C. J., Ferguson, I. T.

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Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices von Löper, P., Müller, R., Hiller, D., Barthel, T., Malguth, E., Janz, S., Goldschmidt, J. C., Hermle, M., Zacharias, M.

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Internal E 5 → T 2 5 transition of Fe 2 + in GaN von Malguth, E., Hoffmann, A., Xu, X.

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Structural and electronic properties of Fe 3 + and Fe 2 + centers in GaN from optical and EPR experiments von Malguth, E., Hoffmann, A., Gehlhoff, W., Gelhausen, O., Phillips, M. R., Xu, X.

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