Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy von Malguth, E., Hoffmann, A., Phillips, M. R.

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Doping-level-dependent optical properties of GaN:Mn von Gelhausen, O., Malguth, E., Phillips, M. R., Goldys, E. M., Strassburg, M., Hoffmann, A., Graf, T., Gjukic, M., Stutzmann, M.

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Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals von Rauch, C., Gehlhoff, W., Wagner, M. R., Malguth, E., Callsen, G., Kirste, R., Salameh, B., Hoffmann, A., Polarz, S., Aksu, Y., Driess, M.

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Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices von Kane, M. H., Strassburg, M., Fenwick, W. E., Asghar, A., Senawiratne, J., Azamat, D., Hu, Z., Malguth, E., Graham, S., Perera, U., Gehlhoff, W., Hoffmann, A., Dietz, N., Summers, C. J., Ferguson, I. T.

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Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices von Löper, P., Müller, R., Hiller, D., Barthel, T., Malguth, E., Janz, S., Goldschmidt, J. C., Hermle, M., Zacharias, M.

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Internal E 5 → T 2 5 transition of Fe 2 + in GaN von Malguth, E., Hoffmann, A., Xu, X.

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Structural and electronic properties of Fe 3 + and Fe 2 + centers in GaN from optical and EPR experiments von Malguth, E., Hoffmann, A., Gehlhoff, W., Gelhausen, O., Phillips, M. R., Xu, X.

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Fe in III-V and II-VI semiconductors von Malguth, Enno, Hoffmann, Axel, Phillips, Matthew R.

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Fast scatterometric measurement of periodic surface structures in plasma-etching processes von Klesse, Wolfgang Matthias, Rathsfeld, Andreas, Groß, Claudine, Malguth, Enno, Skibitzki, Oliver, Zealouk, Lahbib

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Development of ultra-thin tunneling oxides and Si/SiO2 nanostructures for the application in silicon solar cells von Malguth, Enno, Roczen, Maurizio, Gref, Orman, Schoepke, Andreas, Schmidt, Manfred

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Electrical and magnetic properties of Ga 1−x Gd x N grown by metal organic chemical vapor deposition von Gupta, Shalini, Zaidi, Tahir, Melton, Andrew, Malguth, Enno, Yu, Hongbo, Liu, Zhiqiang, Liu, Xiaotao, Schwartz, Justin, Ferguson, Ian T.

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Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications von Roczen, Maurizio, Malguth, Enno, Schade, Martin, Schöpke, Andreas, Laades, Abdelazize, Blech, Michael, Gref, Orman, Barthel, Thomas, Töfflinger, Jan Amaru, Schmidt, Manfred, Leipner, Hartmut S., Korte, Lars, Rech, Bernd

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Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications von Roczen, Maurizio, Schade, Martin, Malguth, Enno, Callsen, Gordon, Barthel, Thomas, Gref, Orman, Töfflinger, Jan A., Schöpke, Andreas, Schmidt, Manfred, Leipner, Hartmut S., Ruske, Florian, Phillips, Matthew R., Hoffmann, Axel, Korte, Lars, Rech, Bernd

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Structural properties of Si/SiO2 nanostructures grown by decomposition of substoichiometric SiOxNy layers for photovoltaic applications von Roczen, Maurizio, Laades, Abdelazize, Schade, Martin, Barthel, Thomas, Ordeñez, Jose, Töfflinger, Jan Amaru, Malguth, Enno, Ruske, Florian, Leendertz, Caspar, Korte, Lars, Leipner, Hartmut S., Rech, Bernd

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The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers von Sun, L., Kruszewski, P., Markevich, V. P., Dawe, C. A., Peaker, A. R., Crowe, I. F., Plesiewicz, J., Prystawko, P., Grzanka, Sz, Grzanka, E., Jakiela, R., Binks, D., Halsall, M. P.

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Effect of yttrium substitution in Fe-doped ZnO nanoparticles: An EPR study von Cabrera-Baez, M., Padrón-Hernández, E., Soares, João M., P. Santos, F.E., Guerra, Y., Peña-Garcia, R.

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Iron as a source of efficient Shockley-Read-Hall recombination in GaN von Wickramaratne, Darshana, Shen, Jimmy-Xuan, Dreyer, Cyrus E., Engel, Manuel, Marsman, Martijn, Kresse, Georg, Marcinkevičius, Saulius, Alkauskas, Audrius, Van de Walle, Chris G.

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High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers von Kudrin, A V, Lesnikov, V P, Danilov, Yu A, Dorokhin, M V, Vikhrova, O V, Demina, P B, Pavlov, D A, Usov, Yu V, Milin, V E, Kuznetsov, Yu M, Kriukov, R N, Konakov, A A, Tabachkova, N Yu

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Deep donors and acceptors in β-Ga2O3 crystals: Determination of the Fe2+/3+ level by a noncontact method von Lenyk, C. A., Gustafson, T. D., Halliburton, L. E., Giles, N. C.

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Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants von Iwinska, M., Piotrzkowski, R., Litwin-Staszewska, E., Ivanov, V. Yu, Teisseyre, H., Amilusik, M., Lucznik, B., Fijalkowski, M., Sochacki, T., Takekawa, N., Murakami, H., Bockowski, M.

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