Diamond field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation von Kasu, Makoto

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Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices von Taniyasu, Yoshitaka, Kasu, Makoto

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Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯0) sapphire substrate von Kim, Seong-Woo, Kawamata, Yuki, Takaya, Ryota, Koyama, Koji, Kasu, Makoto

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Realization of direct bonding of single crystal diamond and Si substrates von Liang, Jianbo, Masuya, Satoshi, Kasu, Makoto, Shigekawa, Naoteru

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Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements von Saha, Niloy Chandra, Kasu, Makoto

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Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes von Sdoeung, Sayleap, Sasaki, Kohei, Masuya, Satoshi, Kawasaki, Katsumi, Hirabayashi, Jun, Kuramata, Akito, Kasu, Makoto

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Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy... von Sdoeung, Sayleap, Otsubo, Yuto, Sasaki, Kohei, Kuramata, Akito, Kasu, Makoto

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Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy von Sdoeung, Sayleap, Sasaki, Kohei, Kawasaki, Katsumi, Hirabayashi, Jun, Kuramata, Akito, Oishi, Toshiyuki, Kasu, Makoto

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Growth of high-quality inch-diameter heteroepitaxial diamond layers on sapphire substrates in comparison to MgO substrates von Kasu, Makoto, Takaya, Ryota, Kim, Seong-Woo

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Observation of nitrogen species at Al2O3/NO2/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy von Saha, Niloy Chandra, Takahashi, Kazutoshi, Imamura, Masaki, Kasu, Makoto

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Improvement of the Al2O3/NO2/H-diamond MOS FET by using Au gate metal and its analysis von Saha, Niloy Chandra, Kasu, Makoto

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Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation von Taniyasu, Yoshitaka, Kasu, Makoto

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Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes von Sdoeung, Sayleap, Sasaki, Kohei, Kawasaki, Katsumi, Hirabayashi, Jun, Kuramata, Akito, Oishi, Toshiyuki, Kasu, Makoto

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Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes von Sdoeung, Sayleap, Sasaki, Kohei, Kawasaki, Katsumi, Hirabayashi, Jun, Kuramata, Akito, Kasu, Makoto

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Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode von Kim, Seong-Woo, Takaya, Ryota, Hirano, Shintaro, Kasu, Makoto

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Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond von Zhu, Xiaobo, Saito, Shiro, Kemp, Alexander, Kakuyanagi, Kosuke, Karimoto, Shin-ichi, Nakano, Hayato, Munro, William J., Tokura, Yasuhiro, Everitt, Mark S., Nemoto, Kae, Kasu, Makoto, Mizuochi, Norikazu, Semba, Kouichi

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Origin of exciton emissions from an AlN p-n junction light-emitting diode von Taniyasu, Yoshitaka, Kasu, Makoto

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Fast Switching NO2-doped p-Channel Diamond MOSFETs von Saha, Niloy Chandra, Shiratsuchi, Tomoki, Kim, Seong-Woo, Koyama, Koji, Oishi, Toshiyuki, Kasu, Makoto

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Formation of stacking fault and dislocation behavior during the high-temperature annealing of single-crystal HPHT diamond von Masuya, Satoshi, Hanada, Kenji, Oshima, Takayoshi, Sumiya, Hitoshi, Kasu, Makoto

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RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond von Hirama, K., Kasu, M., Taniyasu, Y.

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