Annihilation of arsenic-nitrogen bonding defects in annealed InAs1−xNx quantum dots grown through nitrogen background pressure–controlled SS-MBE von Biswas, Mahitosh, Makkar, Roshan Lal, Bhatnagar, Anuj, Chakrabarti, Subhananda

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Varying nitrogen background pressure; an efficient approach to improve electrical properties of MBE-grown GaAs1−xNx thin films with less atomic disorder von Biswas, Mahitosh, Shinde, Nilesh, Makkar, Roshan Lal, Bhatnagar, Anuj, Chakrabarti, Subhananda

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Ultrathin GaAsN matrix-induced reduced full width at half maximum of GaAsN/InAs/GaAsN dot-in-a-well heterostructures with extended emission wavelength von Biswas, Mahitosh, Balgarkashi, Akshay, Makkar, Roshan Lal, Bhatnagar, Anuj, Chakrabarti, Subhananda

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High nitrogen composition–induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy von Biswas, Mahitosh, Tongbram, Binita, Shinde, Nilesh, Makkar, Roshan Lal, Bhatnagar, Anuj, Chakrabarti, Subhananda

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High nitrogen composition–induced low interfacial roughness of GaAs 0.978 N 0.022 /GaAs multiple quantum wells grown through solid-source molecular beam epitaxy von Biswas, Mahitosh, Tongbram, Binita, Shinde, Nilesh, Makkar, Roshan Lal, Bhatnagar, Anuj, Chakrabarti, Subhananda

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