Study on higher-energy emission observed locally around V-pits on InGaN/GaN quantum wells grown on moderate-temperature GaN von Kurai, Satoshi, Gao, Junji, Makio, Ryoga, Hayashi, Naoya, Yuasa, Shota, Yamamoto, Ryutaro, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

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Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers von Kurai, Satoshi, Okawa, Kohei, Makio, Ryoga, Nobata, Genki, Gao, Junji, Sugimoto, Kohei, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

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Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements von Kurai, Satoshi, Higaki, Shota, Imura, Nobuto, Okawa, Kohei, Makio, Ryoga, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

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Potential Barrier in InGaN Single Quantum Well Structure on Moderate-Temperature-Grown GaN as Pit Formation Layer von Kurai, Satoshi, Gao, Junji, Makio, Ryoga, Hayashi, Naoya, Yuasa, Shota, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

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Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers (2) von Kurai, Satoshi, Okawa, Kohei, Makio, Ryoga, Gao, Junji, Hayashi, Naoya, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

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Scanning near-field optical microscopy of green-emitting InGaN/GaN multiple quantum wells with different glowth conditions von Makio, Ryoga, Gao, Junji, Hayashi, Naoya, Yuasa, Shota, Kurai, Satoshi, Okada, Narihito, Tadatomo, Kazuyuki, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh, Yamada, Yoichi

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Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers von Kurai, Satoshi, Okawa, Kohei, Makio, Ryoga, Gao, Junji, Nobata, Genki, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

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Study on higher-energy bands in InGaN Quantum Well Structures by Scanning Near-Field Optical Microscopy (2) von Kurai, Satoshi, Mihara, Renma, Nobata, Genki, Okawa, Kohei, Makio, Ryoga, Okada, Narihito, Tadatomo, Kazuyuki, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh, Yamada, Yoichi

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METAL STRIP PROCESSING METHOD, METAL STRIP MANUFACTURING METHOD, AND PRINTING STATE DETERMINATION DEVICE von TSUCHIYA TADAYOSHI, MAKI ZENTA, MAKIO RYOGA

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中温成長GaN ピット形成層上のInGaN 単一量子井戸構造におけるポテンシャル障壁評価 von 倉井, 聡, 高, 俊吉, 槇尾, 凌我, 林, 直矢, 湯浅, 翔太, 岡田, 成仁, 只友, 一行, 山田, 陽一

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量子井戸構造の成長条件が異なる緑色発光InGaN量子井戸構造における近接場光学顕微分光測定 von 槇尾, 凌我, 高, 俊吉, 林, 直矢, 湯浅, 翔太, 倉井, 聡, 岡田, 成仁, 只友, 一行, 矢野, 良樹, 田渕, 俊也, 松本, 功, 山田, 陽一

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中温GaN層上InGaN多重量子井戸構造におけるVピット近傍のポテンシャル障壁の顕微分光評価(2) von 倉井, 聡, 大川, 康平, 槇尾, 凌我, 高, 俊吉, 林, 直矢, 岡田, 成仁, 只友, 一行, 山田, 陽一

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中温GaN層上InGaN多重量子井戸構造におけるVピット近傍のポテンシャル障壁の顕微分光評価 von 倉井, 聡, 大川, 康平, 槇尾, 凌我, 高, 俊吉, 野畑, 元喜, 岡田, 成仁, 只友, 一行, 山田, 陽一

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近接場光学顕微分光測定による緑色発光InGaN 量子井戸構造の高エネルギー発光成分の評価(2) von 倉井, 聡, 三原, 練磨, 野畑, 元喜, 大川, 康平, 槇尾, 凌我, 岡田, 成仁, 只友, 一行, 矢野, 良樹, 田渕, 俊也, 松本, 功, 山田, 陽一

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