Si doping mechanism in Si doped GaAsN von Tsukasaki, T., Hiyoshi, R., Fujita, M., Makimoto, T.

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Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence von Kumakura, K., Makimoto, T., Kobayashi, N., Hashizume, T., Fukui, T., Hasegawa, H.

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Hexagonal boron nitride grown by MOVPE von Kobayashi, Y., Akasaka, T., Makimoto, T.

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Origin of growth defects in CVD diamond epitaxial films von Tallaire, A., Kasu, M., Ueda, K., Makimoto, T.

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Diamond-based RF power transistors: Fundamentals and applications von Kasu, M., Ueda, K., Yamauchi, Y., Tallaire, A., Makimoto, T.

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Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz von Ueda, K., Kasu, M., Yamauchi, Y., Makimoto, T., Schwitters, M., Twitchen, D.J., Scarsbrook, G.A., Coe, S.E.

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A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate von Makimoto, T., Kumakura, K., Maeda, M., Yamamoto, H., Horikoshi, Y.

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2 W/mm output power density at 1 GHz for diamond FETs von Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., Makimoto, T.

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High RF output power for H-terminated diamond FETs von Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., Makimoto, T.

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All-MgB2 Josephson tunnel junctions von Ueda, K., Saito, S., Semba, K., Makimoto, T., Naito, M.

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High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond von Ueda, K., Kasu, M., Makimoto, T.

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Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy von Wang, C. X., Tsubaki, K., Kobayashi, N., Makimoto, T., Maeda, N.

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Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy von Kobayashi, Y., Nakamura, T., Akasaka, T., Makimoto, T., Matsumoto, N.

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High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base von Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki

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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres von Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

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Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs von Jin-Yu Shiu, Jui-Chien Huang, Desmaris, V., Chia-Ta Chang, Chung-Yu Lu, Kumakura, K., Makimoto, T., Zirath, H., Rorsman, N., Chang, E.Y.

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Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors von Kumakura, K., Makimoto, T., Kobayashi, N., Hashizume, T., Fukui, T., Hasegawa, H.

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Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate von Prinz, G.i M., Ladenburger, A., Schirra, M., Feneberg, M., Thonke, K., Sauer, R., Taniyasu, Y., Kasu, M., Makimoto, T.

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Thin film growth of (Cu, C)Ba2Ca(n-1)CunOy, (n = 1-4) superconductor by molecular beam epitaxy von SHIBATA, H, KARIMOTO, S, TSUKADA, A, MAKIMOTO, T

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Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers von Kasu, M., Makimoto, T., Ebert, W., Kohn, E.

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