Strain-Engineered MOSFETs von Maiti, C. K, Maiti, T. K

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Studies on switching mechanisms in Pd-nanodot embedded Nb2O5 memristors using scanning tunneling microscopy von Hota, M.K., Bera, M.K., Verma, S., Maiti, C.K.

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Performance improvement of flash memory using AlN as charge-trapping Layer von Chakraborty, P., Mahato, S.S., Maiti, T.K., Bera, M.K., Mahata, C., Samanta, S.K., Biswas, A., Maiti, C.K.

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Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits von Armstrong, G.A, Armstrong, G.A, Maiti, C.K

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Reliability of ultra thin ZrO2 films on strained-Si von BERA, M. K, MAITI, C. K

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HfAlO high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties von Mallik, S., Mahata, C., Hota, M.K., Dalapati, G.K., Chi, D.Z., Sarkar, C.K., Maiti, C.K.

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Determination of the valence band offset and minority carrier lifetime in Ge-rich layers on relaxed-SiGe von Chakraborty, S., Bera, M.K., Bhattacharya, S., Bose, P.K., Maiti, C.K.

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Effects of Rapid Thermal Annealing Temperature on Performances of Nanoscale FinFETs von Sengupta, M., Chattopadhyay, S., Maiti, C.K.

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Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si von Maiti, C.K., Dalapati, G.K., Chatterjee, S., Samanta, S.K., Varma, S., Patil, S.

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Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers von DALAPATI, G. K, CHATTERJEE, S, SAMANTA, S. K, MAITI, C. K

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Determination of band offsets in strained-Si heterolayers von Maiti, C.K., Samanta, S.K., Chatterjee, S., Dalapati, G.K., Bhattacharya, S., Armstrong, B.M., Gamble, H.S., McCarthy, J., Perova, T.S., Moore, R.A.

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Minority carrier lifetime and diffusion length in Si1−x−yGexCy heterolayers von Samanta, S.K., Maikap, S., Chatterjee, S., Maiti, C.K.

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Characterization of Y2O3 gate dielectric on n-GaAs substrates von DAS, P. S, DALAPATI, G. K, CHI, D. Z, BISWAS, A, MAITI, C. K

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Extraction of interface state density of Pt/p-strained-Si Schottky diode von Chattopadhyay, S., Bera, L.K., Ray, S.K., Bose, P.K., Maiti, C.K.

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Interface Properties of Mixed (TiO2)1−x(Y2O3)x and (Ta2O5)1−x(Y2O3)x (0≤x≤1) Gate Dielectrics on Sulfur-Passivated GaAs von Das, T., Mahata, C., Mallik, S., Varma, S., Sutradhar, G., Bose, P. K., Maiti, C.K.

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Si 1 − x Ge x metal-oxide-semiconductor capacitors with HfTaO x gate dielectrics von Mallik, S., Mahata, C., Hota, M.K., Sarkar, C.K., Maiti, C.K.

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Reliability of ultra thin ZrO 2 films on strained-Si von Bera, M.K., Maiti, C.K.

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Si1 ― xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics von MALLIK, S, MAHATA, C, HOTA, M. K, SARKAR, C. K, MAITI, C. K

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WHERE ARE WE HEADING? von Maiti, C.K

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An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown von Miranda, E., Mahata, C., Das, T., Maiti, C.K.

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